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Green rectangular DDR3 memory module with black chips and gold contacts

SAMSUNG

SAMSUNG M378B5173DB0-CK0 4GB DDR3-1600 desktop RAM

SKU CH-N60B-WTXNK

4GB DDR3-1600 unbuffered desktop module with CL11 latency and 1.50V operation

  • Capacity4GB
  • SpeedDDR3 1600 (PC3 12800)
  • CAS LatencyCL11
  • Voltage1.50V
  • ECCNo
  • Buffered/RegisteredUnbuffered
  • 4GB capacity expands system memory for everyday tasks
  • DDR3 1600 speed delivers 12800 MT/s data rate
  • CL11 latency keeps response times low
  • 50V operation matches standard desktop voltage
  • Unbuffered design fits standard consumer motherboards

4 GB DDR3-1600 desktop module

This Samsung M378B5173DB0-CK0 module provides 4 GB of DDR3 memory running at 1600 MT/s with a CAS latency of 11. It is an unbuffered, non-ECC DIMM designed for standard desktop platforms that accept DDR3 memory. Builders upgrading older systems or replacing a failed stick will find it matches the PC3-12800 speed grade.

Standard voltage and unbuffered design

The module operates at the standard DDR3 voltage of 1.50 V, drawing typical power for this generation without requiring elevated voltage settings. Unbuffered organisation means the memory controller addresses the DRAM chips directly, adding no extra register delay. Under normal desktop workloads the module runs within standard thermal limits for DDR3 DIMMs.

4 GB capacity per module

Each stick supplies exactly 4 GB of addressable memory, which is the single figure that determines whether this part fits the required total. Systems needing 8 GB or 16 GB must populate multiple slots with identical modules. Buyers who need a single 8 GB DIMM or a higher-density kit cannot use this part.

Põhijooned

  • 4GB capacity expands system memory for everyday tasks
  • DDR3 1600 speed delivers 12800 MT/s data rate
  • CL11 latency keeps response times low
  • 50V operation matches standard desktop voltage
  • Unbuffered design fits standard consumer motherboards

Tehnilised andmed

BrandSAMSUNG
ModelM378B5173DB0-CK0
Capacity4GB
SpeedDDR3 1600 (PC3 12800)
CAS LatencyCL11
Voltage1.50V
ECCNo
Buffered/RegisteredUnbuffered
ChipsetSamsung Chipset

Küsimused selle toote kohta

How do I install the M378B5173DB0-CK0 module and which step is often missed?

Align the notch on the 240-pin DDR3 stick with the motherboard slot key, press down firmly until both retention clips snap shut, and verify the system detects 4GB at 1600 MHz in BIOS.

What maintenance or replacement will this 4GB DDR3 kit need over time?

No routine maintenance is required; keep the gold contacts clean and ensure the 1.50 V supply stays stable, replacing the module only if memory errors appear.

What limit appears first when the CL11 1600 MHz module runs sustained workloads?

The CAS latency of 11 cycles at 1600 MHz sets the response-time floor, so latency-sensitive tasks hit that timing ceiling before bandwidth saturates.

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