SAMSUNG
SAMSUNG 990 2TB M.2 2280 internal SSD MZ-V9V2T0B/AM
- Internal Solid Stat…
- Consumer
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SAMSUNG
SAMSUNG 990 1TB M.2 2280 internal SSD MZ-V9V1T0B/AM
A 1TB M.2 2280 internal SSD using Samsung V NAND with PCI-Express 4.0 x4 interface, delivering up to 7150 MBps read and 6450 MBps write speeds
- Device TypeInternal Solid State Drive (SSD)
- Used ForConsumer
- Form FactorM.2 2280
- Capacity1TB
- Memory ComponentsSamsung V NAND
- InterfacePCI-Express 4.0 x4
Capacity
- 1TB
- 2TB
Pārsvītrotās versijas pastāv, taču šeit nav pieejamas.
- Up to 7150 MBps sequential read for fast boot and load times
- Up to 6450 MBps sequential write speeds large file transfers
- 400 TBW endurance rating supports heavy write workloads
- AES 256 encryption with TCG Opal 2.0 protects stored data
- Host Memory Buffer cache reduces controller overhead for efficient performance
Samsung 990 1TB M.2 2280 SSD
The Samsung 990 MZ-V9V1T0B/AM is a 1TB internal solid-state drive built for consumer PCs. It uses an M.2 2280 form factor and a PCI-Express 4.0 x4 interface with the NVMe 2.0 protocol. An in-house controller and Samsung V-NAND memory deliver high throughput for demanding workloads.
1TB capacity and 400TB endurance
The drive provides 1TB of usable space for operating systems, applications and large media libraries. Sequential reads reach up to 7150 MBps and writes up to 6450 MBps, while random 4KB performance hits 700,000 read IOPS and 1,100,000 write IOPS. A 400TB written rating and HMB cache support sustained heavy use before wear becomes a concern.
PCIe 4.0 x4 interface limits
The PCI-Express 4.0 x4 link caps maximum theoretical bandwidth, so sequential speeds cannot exceed the lane limit. NVMe 2.0 adds namespace and endurance features but does not increase raw throughput. Host Memory Buffer uses system DRAM instead of on-board cache, so performance depends on platform memory availability and power state implementation.
Priekšrocības
- Up to 7150 MBps sequential read for fast boot and load times
- Up to 6450 MBps sequential write speeds large file transfers
- 400 TBW endurance rating supports heavy write workloads
- AES 256 encryption with TCG Opal 2.0 protects stored data
- Host Memory Buffer cache reduces controller overhead for efficient performance
Specifikācijas
| Brand | SAMSUNG |
|---|---|
| Series | 990 |
| Model | MZ-V9V1T0B/AM |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 1TB |
| Memory Components | Samsung V NAND |
| Interface | PCI-Express 4.0 x4 |
| Protocol | NVMe 2.0 |
| Controller | In-House Controller |
| Cache | HMB (Host Memory Buffer) |
| Encryption | Class 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667) |
| Max Sequential Read | Up to 7150 MBps |
| Max Sequential Write | Up to 6450 MBps |
| 4KB Random Read | Up to 700,000 IOPS |
| 4KB Random Write | Up to 1,100,000 IOPS |
| Terabytes Written (TBW) | 400TB |
| Power Consumption (Idle) | PS3 APST on / PS4 L1.2: Typical 55mW / Typical 3mW |
| Power Consumption (Active) | Read/Write, Average: 4.0W / 3.7W |
| Height | 2.38mm |
| Width | 22.15mm |
| Depth | 80.15mm |
| Weight | 6g |
| Sūtījuma svars | 0.45 kg |
| Sūtījuma izmēri | 165 × 99 × 20 mm |
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Jautājumi par šo preci
Will the 990 1TB run at full speed in my older PCIe 3.0 motherboard slot?
The drive is backward compatible with PCIe 3.0 slots; it will operate at PCIe 3.0 x4 speeds instead of its rated 7150 MBps read and 6450 MBps write.
How can I verify the 990 1TB is delivering its rated 700000 random read IOPS after installation?
Run a standard NVMe benchmark such as CrystalDiskMark using a 4KB random read test; results approaching 700000 IOPS confirm the controller and Samsung V NAND are performing as specified.
Does the MZ-V9V1T0B/AM retail box include a heatsink or mounting screw?
The package contains only the M.2 2280 drive itself; any heatsink or M.2 mounting screw must be sourced separately from your motherboard accessories or a third-party kit.
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