SAMSUNG
SAMSUNG 990 M.2 2280 1TB internal SSD
- Internal Solid Stat…
- Consumer
217,99 $
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SAMSUNG
SAMSUNG 990 2TB M.2 2280 PCIe 4.0 x4 internal SSD
High-capacity 2TB internal SSD delivering up to 7,250 MB/s sequential read and 6,450 MB/s sequential write speeds for fast game loads and large file transfers
- Max Sequential ReadUp to 7,250 MB/s
- Max Sequential WriteUp to 6,450 MB/s
- 4KB Random ReadUp to 850,000 IOPS
- 4KB Random WriteUp to 1,200,000 IOPS
- Terabytes Written (TBW)800TB
- ControllerIn-House Controller
Capacity 2TB
- 1TB
- 2TB
- Up to 7,250 MB/s sequential read accelerates game loading and large-file transfers
- Up to 6,450 MB/s sequential write speeds project exports and install updates
- Up to 1,200,000 IOPS random write keeps multitasking responsive under heavy workloads
- 800 TBW endurance rating supports long-term archival of 4K footage and growing libraries
- AES 256-bit hardware encryption protects data without software overhead
Capacity and Interface
The Samsung 990 is a 2 TB internal solid-state drive built in the M.2 2280 form factor and connected through a PCIe 4.0 x4 link. It uses Samsung V-NAND and an in-house controller with Host Memory Buffer caching. The drive supports NVMe 2.0 and hardware-based AES 256 encryption with TCG Opal 2.0 and IEEE 1667 compliance.
Ideal Users and Limits
This drive suits desktop builders, game collectors and digital archivists who want a large, fast library without deleting titles or offloading footage. The 800 TBW rating and strong random IOPS handle heavy write workloads. Systems limited to PCIe 3.0 or lacking an M.2 slot will not reach the advertised throughput and should consider a different interface.
Sequential Read Speed
The headline figure is a maximum sequential read of 7,250 MB/s, paired with a 6,450 MB/s sequential write. Those speeds decide whether the drive can feed a GPU-direct storage pipeline or saturate a PCIe 4.0 x4 lane during large game loads and 4 K media transfers. If the workload rarely hits sustained sequential queues, a slower, cheaper drive may be more cost-effective.
Priekšrocības
- Up to 7,250 MB/s sequential read accelerates game loading and large-file transfers
- Up to 6,450 MB/s sequential write speeds project exports and install updates
- Up to 1,200,000 IOPS random write keeps multitasking responsive under heavy workloads
- 800 TBW endurance rating supports long-term archival of 4K footage and growing libraries
- AES 256-bit hardware encryption protects data without software overhead
Specifikācijas
| Max Sequential Read | Up to 7,250 MB/s |
|---|---|
| Max Sequential Write | Up to 6,450 MB/s |
| 4KB Random Read | Up to 850,000 IOPS |
| 4KB Random Write | Up to 1,200,000 IOPS |
| Terabytes Written (TBW) | 800TB |
| Controller | In-House Controller |
| Form Factor | M.2 2280 |
| Capacity | 2TB |
| Interface | PCI-Express 4.0 x4 |
| Memory Components | Samsung V NAND |
| Protocol | NVMe 2.0 |
| Cache | HMB (Host Memory Buffer) |
| Encryption | Class 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667) |
| Power Consumption (Active) | Read/Write, Average: 4.3W / 3.8W |
| Power Consumption (Idle) | PS3 APST on / PS4 L1.2: Typical 55mW / Typical 3mW |
| Brand | SAMSUNG |
| Series | 990 |
| Model | MZ-V9V2T0BW |
| Part Number | MZ-V9V2T0BW |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Height | 2.38mm |
| Width | 22.15mm |
| Depth | 80.15mm |
| Weight | 6g |
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Jautājumi par šo preci
Will the M.2 2280 form factor fit my desktop motherboard slot?
The drive uses the standard M.2 2280 form factor, measuring 22 mm wide by 80 mm long, which fits most modern desktop motherboards with an M.2 key-M slot.
How do I install the drive and which step is often missed?
Insert the drive at an angle into the PCIe 4.0 x4 M.2 slot, secure it with the motherboard screw, then enable NVMe in the BIOS so the operating system can detect it.
When will the Samsung V NAND memory need replacement based on endurance?
The drive is rated for 800 TBW, meaning you can write up to 800 terabytes before the warranty endurance limit is reached.
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