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SanDisk Optimus GX PRO 8100 4TB M.2 2280 internal SSD, green circuit board with black controller and NAND chips, no heatsink

SanDisk

SanDisk Optimus GX PRO 8100 4TB M.2 2280 PCIe 5.0 x4 NVMe 2.0 internal SSD SDSP82400TAN-000E0

SKU CH-ZPPQ-37SYQ MPN SDSP82400TAN-000E0

A 4 TB PCIe 5.0 x4 NVMe 2.0 M.2 2280 internal SSD delivering up to 14 900 MB/s read, 14 000 MB/s write, 2.3 M random read IOPS and 2.4 M random write IOPS with 2 400 TBW endurance

  • Device TypeInternal Solid State Drive (SSD)
  • Form FactorM.2 2280-S3-M
  • Capacity4TB
  • Memory Components3D NAND TLC
  • InterfacePCI-Express 5.0 x4
  • ProtocolNVMe 2.0

Option 4TB

  • Sequential reads up to 14900 MB/s for rapid data access
  • Sequential writes up to 14000 MB/s for fast content creation
  • Random reads up to 2.3M IOPS accelerate multitasking workloads
  • Random writes up to 2.4M IOPS handle intensive write tasks
  • 2400 TBW endurance rating supports heavy write cycles

4TB PCIe 5.0 NVMe drive for AI and gaming

The SanDisk Optimus GX PRO 8100 is a 4TB M.2 2280 internal SSD built on 3D NAND TLC. It uses a PCIe 5.0 x4 interface with NVMe 2.0 protocol. The drive targets professionals, creators and gamers who need fast access to large project files and game libraries.

nCache 4.0 technology and BiCS 8th gen NAND

Integrated SanDisk nCache 4.0 technology accelerates burst transfers and helps sustain high throughput during heavy workloads. The 8th generation BiCS TLC 3D CBA NAND provides the density for the 4TB capacity while supporting the endurance needed for write intensive AI and content creation tasks.

Heatsink free design with 2400 TBW endurance

This model ships without a heatsink, so it fits tight laptop or compact desktop M.2 slots without clearance issues. The 2400 TBW endurance rating and 1750000 hour MTBF indicate durability for sustained workloads. Operating temperature ranges from 0 to 85 degrees Celsius with idle power of 5 mW and active power up to 7.0W.

Öne çıkanlar

  • Sequential reads up to 14900 MB/s for rapid data access
  • Sequential writes up to 14000 MB/s for fast content creation
  • Random reads up to 2.3M IOPS accelerate multitasking workloads
  • Random writes up to 2.4M IOPS handle intensive write tasks
  • 2400 TBW endurance rating supports heavy write cycles

Teknik özellikler

BrandSanDisk
SeriesOptimus GX PRO 8100
ModelSDSP82400TAN-000E0
Device TypeInternal Solid State Drive (SSD)
Form FactorM.2 2280-S3-M
Capacity4TB
Memory Components3D NAND TLC
InterfacePCI-Express 5.0 x4
ProtocolNVMe 2.0
Max Sequential ReadUp to 14900 MBps
Max Sequential WriteUp to 14000 MBps
4KB Random ReadUp to 2,300,000 IOPS
4KB Random WriteUp to 2,400,000 IOPS
Terabytes Written (TBW)2400TB
MTBF1,750,000 hours
HeatSinkwithout HeatSink
Power Consumption (Idle)5 mW
Power Consumption (Active)Average Active Power Read: 6.5W
Average Active Power Write: 7.0W
Operating Temperature0°C ~ +85°C
Storage Temperature-40°C ~ +85°C
Max Shock Resistance1,500G @ 0.5 ms half-sine
Max Vibration ResistanceOperating Vibration: 5 gRMS, 10-2000 Hz, 3 axes
Non-operating Vibration: 4.9 gRMS, 7-800 Hz, 3 axes
Height2.38mm
Width22mm
Depth80mm
Weight7.5g
Kargo ağırlığı0.05 kg
Koli boyutu1270 × 102 × 1 mm

Bu modelin diğer sürümleri

Aynı seriden 5 tane daha

Aynı aile, farklı bellek, soğutucu veya frekans — karar vermeden önce karşılaştırın.

Bu ürünle ilgili sorular

How many terabytes can be written to the 4TB Optimus GX PRO 8100 before the endurance rating is reached?

The 4TB model carries a 2400 TBW endurance rating, meaning it is warranted for 2,400 terabytes of host writes over its service life.

At what temperature does the 4TB Optimus GX PRO 8100 hit its operating limit during sustained workloads?

The drive is rated to operate from 0 °C up to 85 °C; sustained heavy I/O will push the controller toward the top of that range first.

What is the active power draw of the 4TB Optimus GX PRO 8100 when it runs all day?

Average active power is 6.5 W during reads and 7.0 W during writes, with idle consumption at 5 mW.

Bu reyondan diğerleri

Müşteriler bunları karşılaştırdı

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