SAMSUNG 970 EVO MZ-V7E500E 500GB internal SSD
- Internal Solid Stat…
- Consumer
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SAMSUNG
A 1TB M.2 2280 NVMe SSD with PCIe 3.0 x4 interface delivering 3400 MB/s reads and 2500 MB/s writes
The Samsung 970 EVO MZ-V7E1T0E is a 1TB internal solid-state drive built for consumer PCs. It uses the M.2 2280 form factor and connects through a PCIe Gen 3.0 x4 interface with NVMe 1.3 protocol. The drive combines V-NAND 3-bit MLC memory with a Samsung Phoenix controller and 1GB of Low Power DDR4 SDRAM cache.
Samsung TurboWrite technology accelerates write speeds beyond standard NVMe performance by using an intelligent buffer. The drive delivers sequential reads up to 3400 MBps and sequential writes up to 2500 MBps. Random read reaches 500,000 IOPS at QD32 and 15,000 IOPS at QD1, while random write hits 450,000 IOPS at QD32 and 50,000 IOPS at QD1. Dynamic Thermal Guard monitors temperature to protect data integrity during heavy workloads.
Verify that your motherboard has an M.2 slot keyed for PCIe NVMe and supports the 2280 length. Confirm the system can provide up to 10W of power during burst operation and that airflow keeps the drive within the 0°C to 70°C operating range. Samsung Magician software is available for drive management, monitoring and maintenance.
| Brand | SAMSUNG |
|---|---|
| Series | 970 EVO |
| Model | MZ-V7E1T0E |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 1TB |
| Memory Components | V-NAND 3-bit MLC |
| Interface | PCIe Gen 3.0 x4, NVMe 1.3 |
| Controller | Samsung Phoenix |
| Cache | 1GB Low Power DDR4 SDRAM |
| Max Sequential Read | Up to 3400 MBps |
| Max Sequential Write | Up to 2500 MBps |
| 4KB Random Read | QD32: Up to 500,000 IOPS QD1: Up to 15,000 IOPS |
| 4KB Random Write | QD32: Up to 450,000 IOPS QD1: Up to 50,000 IOPS |
| MTBF | 1,500,000 hours |
| Features | Non-Volatile Memory Express (NVMe) 970 EVO 1TB NVMe SSDs with a newly enhanced Phoenix controller outperform our previous 960 EVO 1TB model with exceptionally fast sequential read/write speeds up to 3,400/2,300 MB/s. They also support PCI Express (PCIe) Gen 3 x4 lanes to provide high bandwidth and low latency, making them perfect for business professionals who need cutting edge-performance for high-end computing. TurboWrite Technology Samsung's intelligent TurboWrite technology helps to maximize your computing ability, accelerating write speeds above and beyond the already exceptiona |
| Power Consumption (Idle) | 30 mW (max) |
| Power Consumption (Active) | Average: 6W / Maximum: 10W (Burst mode) |
| Operating Temperature | 0°C ~ +70°C |
| Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
| Height | 2.38mm |
| Width | 22.15mm |
| Depth | 80.15mm |
| Weight | 8.00g |
| Tarnekaal | 0.08 kg |
| Pakendi mõõtmed | 141 × 98 × 24 mm |
Selle mudeli teised versioonid
Sama seeria, erinev mälumaht, jahutus või taktsagedus — võrrelge enne otsustamist.
The controller is rated for 0 °C to 70 °C operating temperature and Dynamic Thermal Guard throttles the drive to stay within that range.
You need an M.2 2280 key-M slot wired for PCIe 3.0 x4 and NVMe 1.3 support.
No, the drive requires an NVMe 1.3 controller; AHCI-only M.2 slots cannot communicate with it.
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