SAMSUNG
SAMSUNG 870 QVO MZ-77Q4T0BW 4TB 2.5" SATA internal SSD
A 2.5" SATA internal SSD with 4TB capacity, Samsung V-NAND 4bit MLC memory, up to 560 MBps read and 530 MBps write speeds, and a 4 GB DDR4 cache
- Device TypeInternal Solid State Drive (SSD)
- Used ForConsumer
- Form Factor2.5"
- Capacity4TB
- Memory ComponentsSamsung V-NAND 4bit MLC
- InterfaceSATA III
- 4TB capacity stores large media libraries and game collections
- Sequential read up to 560 MBps and write up to 530 MBps for fast boot and app launch
- Samsung V-NAND 4bit MLC with MKX controller delivers up to 98,000 random read IOPS
- 1,500,000 hour MTBF and 1500G shock resistance protect data in daily use
- 4 GB Low Power DDR4 cache and Intelligent TurboWrite sustain write performance over time
4TB SATA III SSD for everyday PCs
The Samsung 870 QVO MZ-77Q4T0BW is a 2.5-inch internal solid-state drive built for consumer desktops and laptops. It uses Samsung V-NAND 4bit MLC memory and a Samsung MKX controller to deliver 4TB of storage over a SATA III interface. The drive includes a 4GB Low Power DDR4 SDRAM cache to help sustain performance during typical workloads.
SATA III interface limits sequential speed
Sequential reads reach up to 560 MBps and writes up to 530 MBps, matching the practical ceiling of the SATA III bus. Random 4KB performance is rated at up to 98,000 IOPS read and 88,000 IOPS write. Intelligent TurboWrite uses a larger variable buffer to maintain write speeds over extended transfers. Power draw is 35 mW idle and 3.2 W active, with an operating range of 0°C to 70°C.
1.5 million-hour MTBF for long-term use
The drive carries a mean-time-between-failures rating of 1,500,000 hours and a shock resistance of 1500G. These figures indicate the endurance expected for a high-capacity QLC drive in daily consumer use. The combination of capacity, SATA compatibility and rated reliability makes it a straightforward upgrade for systems limited to the 2.5-inch SATA form factor.
Helstu kostir
- 4TB capacity stores large media libraries and game collections
- Sequential read up to 560 MBps and write up to 530 MBps for fast boot and app launch
- Samsung V-NAND 4bit MLC with MKX controller delivers up to 98,000 random read IOPS
- 1,500,000 hour MTBF and 1500G shock resistance protect data in daily use
- 4 GB Low Power DDR4 cache and Intelligent TurboWrite sustain write performance over time
Tæknilýsing
| Brand | SAMSUNG |
|---|---|
| Series | 870 QVO Series |
| Model | MZ-77Q4T0BW |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | 2.5" |
| Capacity | 4TB |
| Memory Components | Samsung V-NAND 4bit MLC |
| Interface | SATA III |
| Controller | Samsung MKX Controller |
| Cache | Samsung 4 GB Low Power DDR4 SDRAM |
| Max Sequential Read | Up to 560 MBps |
| Max Sequential Write | Up to 530 MBps |
| 4KB Random Read | Up to 98,000 IOPS |
| 4KB Random Write | Up to 88,000 IOPS |
| MTBF | 1,500,000 hours |
| Power Consumption (Idle) | 35 mW |
| Power Consumption (Active) | 3.2 W |
| Operating Temperature | 0°C ~ +70°C |
| Max Shock Resistance | 1500G |
| Height | 6.80mm |
| Width | 100.00mm |
| Depth | 69.85mm |
| Weight | 54.00g |
Spurningar um þessa vöru
Should I choose the 4 TB model or look at the smaller capacities in the 870 QVO line?
The 4 TB version gives you the largest single-drive capacity available in this SATA series while keeping the same 560 MB/s read and 530 MB/s write limits, so you only need one bay for a full media library.
What does the 560 MB/s sequential read figure actually deliver once the drive is installed?
It means the drive saturates the SATA III bus, so boot times, game loads and large file copies run at the interface ceiling rather than being bottlenecked by the SSD itself.
How does the SATA III interface limit real-world performance of this drive?
The SATA III link caps both sequential and sustained random throughput at the 560/530 MB/s ceiling, so the MKX controller and 4 GB DDR4 cache cannot push speeds beyond that boundary.
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