SAMSUNG
SAMSUNG 970 EVO PLUS M.2 2280 250GB internal SSD MZ-V7S250B/AM
- Internal Solid Stat…
- Consumer
44,99 $
0.00058121BTC
Krājumā
SAMSUNG
SAMSUNG 970 EVO PLUS MZ-V7S1T0B/AM 1TB internal SSD
M.2 2280 internal SSD with 1TB V-NAND storage, PCIe Gen 3.0 x4 NVMe 1.3 interface, up to 3500 MBps read and 3300 MBps write speeds, 600 TBW endurance and AES 256-bit encryption
- Device TypeInternal Solid State Drive (SSD)
- Used ForConsumer
- Form FactorM.2 2280
- Capacity1TB
- Memory ComponentsV-NAND 3-bit MLC
- InterfacePCIe Gen 3.0 x4, NVMe 1.3
- Up to 3500 MB/s sequential read speeds accelerate large-file workflows
- Up to 3300 MB/s sequential write speeds shorten save and export times
- 600 TBW endurance rating supports heavy daily write workloads
- AES 256-bit hardware encryption protects stored data without software overhead
- Dynamic Thermal Guard throttles heat to sustain performance under load
Samsung 970 EVO Plus 1TB M.2 2280
This internal SSD uses a PCIe Gen 3.0 x4 interface with NVMe 1.3 protocol. It is built for consumer desktops and laptops that need fast storage for operating systems, games, and creative workloads. The drive delivers up to 3500 MBps sequential read and 3300 MBps sequential write speeds.
V-NAND 3-bit MLC with 1GB DDR4 cache
The M.2 2280 form factor fits standard motherboard slots without adapters. Samsung Phoenix controller manages the V-NAND memory and the 1GB Low Power DDR4 SDRAM cache for sustained performance. AES 256-bit encryption with TCG Opal and IEEE 1667 support protects data at rest.
Dynamic Thermal Guard manages heat
The controller monitors temperature and throttles to maintain optimal operating limits during heavy writes. Rated endurance is 600 TBW with a 1,500,000 hour MTBF. Random read reaches 600,000 IOPS at QD32 and 19,000 IOPS at QD1; random write reaches 550,000 IOPS at QD32 and 60,000 IOPS at QD1.
Priekšrocības
- Up to 3500 MB/s sequential read speeds accelerate large-file workflows
- Up to 3300 MB/s sequential write speeds shorten save and export times
- 600 TBW endurance rating supports heavy daily write workloads
- AES 256-bit hardware encryption protects stored data without software overhead
- Dynamic Thermal Guard throttles heat to sustain performance under load
Specifikācijas
| Brand | SAMSUNG |
|---|---|
| Series | 970 EVO PLUS |
| Model | MZ-V7S1T0B/AM |
| Part Number | MZ-V7S1T0B/AM |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 1TB |
| Memory Components | V-NAND 3-bit MLC |
| Interface | PCIe Gen 3.0 x4, NVMe 1.3 |
| Controller | Samsung Phoenix |
| Cache | Samsung 1GB Low Power DDR4 SDRAM |
| Encryption | AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive) |
| Max Sequential Read | Up to 3500 MBps |
| Max Sequential Write | Up to 3300 MBps |
| 4KB Random Read | QD32: Up to 600,000 IOPS QD1: Up to 19,000 IOPS |
| 4KB Random Write | QD32: Up to 550,000 IOPS QD1: Up to 60,000 IOPS |
| Terabytes Written (TBW) | 600TB |
| MTBF | 1,500,000 hours |
| Features | Always Evolving SSD The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by the latest V-NAND technology and firmware optimization. It maximizes the potential of NVMe bandwidth for unbeatable computing. Level up Performance The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. Powered by the latest V-NAND technology - which brings greater NAND performance and higher power efficiency - along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost speed. Desi |
| Power Consumption (Idle) | Max. 30 mW |
| Power Consumption (Active) | Average: 6W Maximum: 9W (Burst mode) |
| Operating Temperature | 0°C ~ +70°C |
| Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
| Height | 2.38mm |
| Width | 22.15mm |
| Depth | 80.15mm |
| Weight | 8.00g |
| Sūtījuma svars | 0.09 kg |
| Sūtījuma izmēri | 155 × 97 × 23 mm |
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KrājumāJautājumi par šo preci
What does the PCIe Gen 3.0 x4 NVMe 1.3 interface cap sequential speeds at?
The PCIe Gen 3.0 x4 NVMe 1.3 interface caps sequential read at 3500 MB/s and sequential write at 3300 MB/s.
What physical slot and form factor does the M.2 2280 drive require?
It requires an M.2 2280 slot that accepts a single-sided 80 mm module.
How is the drive installed and what step is often missed?
Insert the drive at an angle into the M.2 slot, secure it with the motherboard screw, then enable NVMe in BIOS so the OS detects it.
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