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Green circuit board with black memory chips and gold edge connectors

A-Tech

A-Tech 64GB DDR4 2666MHz CL19 1.20V ECC LRDIMM 288-Pin Server Memory

SKU CH-N9XE-6E47X

64 GB DDR4 2666 MHz ECC LRDIMM module with 1.20 V CL19 timing and 4Rx4 quad-rank Samsung chips, Supermicro certified

  • Capacity64GB
  • SpeedDDR4 2666 (PC4 21300)
  • CAS LatencyCL19
  • Voltage1.20V
  • ECCYes
  • Buffered/RegisteredLoad Reduced
  • Supermicro certified for guaranteed server compatibility
  • Samsung DDR4 chips deliver reliable 2666 MHz performance
  • 64 GB quad-rank capacity handles heavy virtualization workloads
  • ECC load-reduced design protects data integrity at scale
  • 20 V standard voltage keeps power draw efficient

Supermicro Certified 64GB LRDIMM

This Supermicro certified 64GB DDR4 LRDIMM module uses Samsung chips and runs at 2666MHz with CL19 latency at 1.20V. It is built for servers that require ECC load reduced memory in a 288-pin form factor. The quad rank 4Rx4 organisation helps maximise capacity per slot.

Load reduced limits on standard DDR4 buses

Load reduced DIMMs reduce electrical load on the memory bus so more ranks can be populated per channel. The DDR4 2666 standard caps the data rate at 2666MT/s and the registered command and address timing at CL19 for this module. Populating every slot at this speed depends on the platform memory controller and BIOS support for quad rank LRDIMMs.

Quad rank 4Rx4 decides slot planning

The 4Rx4 organisation means each 64GB module presents four logical ranks to the memory controller. Systems limited to eight ranks per channel can only accept two of these modules per channel. Buyers needing higher per slot density or different rank counts must choose a different module configuration.

Акценти

  • Supermicro certified for guaranteed server compatibility
  • Samsung DDR4 chips deliver reliable 2666 MHz performance
  • 64 GB quad-rank capacity handles heavy virtualization workloads
  • ECC load-reduced design protects data integrity at scale
  • 20 V standard voltage keeps power draw efficient

Спецификации

BrandSuperMicro
SeriesSupermicro Certified
ModelMEM-DR464LE-LR26
Capacity64GB
SpeedDDR4 2666 (PC4 21300)
CAS LatencyCL19
Voltage1.20V
ECCYes
Buffered/RegisteredLoad Reduced
Rank4DRx4 (4Rx4)
ChipsetSamsung Chipset
FeaturesSupermicro Certified MEM-DR464LE-LR26 (M386A8K40BM2-CTD)

Въпроси за този артикул

Should I choose the 64GB LRDIMM or a smaller Registered DIMM for my server?

The 64GB LRDIMM uses a load-reduced design that lowers electrical load on the memory bus, allowing higher total capacity per channel than standard Registered DIMMs of the same speed.

What does DDR4 2666 CL19 mean for actual throughput in my system?

The module transfers data at 2666 MT/s with a CAS latency of 19 cycles, so real-world bandwidth depends on your CPU memory controller and the number of populated channels.

Is the 288-pin LRDIMM interface limited to PC4-21300 speeds?

The 288-pin DDR4 LRDIMM form factor supports this module at PC4-21300 (2666 MT/s); faster DDR4 speeds would require modules rated for those higher data rates.

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