SAMSUNG
SAMSUNG MZ-TL23T8A PM9A3 3.84TB E1.S PCIe Gen 4x4 internal SSD
A 3.84 TB E1.S internal SSD with 6800 MB/s sequential read and 4000 MB/s sequential write
- 84 TB capacity supports large enterprise workloads
- Sequential read up to 6800 MB/s accelerates data access
- Random read 1,000,000 IOPS handles heavy queue depths
- 128-layer V-NAND TLC enables high density and endurance
- E1.S 9.5 mm form factor fits dense server chassis
Enterprise E1.S capacity
The Samsung PM9A3 MZ-TL23T8A is a 3.84 TB internal solid-state drive built for servers and storage arrays that use the E1.S form factor. It connects through a PCIe Gen 4 x4 interface and uses Samsung 128-layer V-NAND TLC flash.
Suited for high-density read-heavy workloads
This drive fits systems designed for the E1.S 9.5 mm height and 118.75 mm length with a 33.6 mm width. Builders using U.2, M.2 or taller E1.S bays cannot install it without an adapter or a different chassis.
Sequential read reaches 6800 MB/s
That throughput supports fast data ingest and analytics pipelines. Random read hits 1,000,000 IOPS while random write reaches 190,000 IOPS, and the drive draws 11 W reading and 13.5 W writing with a 2,000,000-hour MTBF.
Акценти
- 84 TB capacity supports large enterprise workloads
- Sequential read up to 6800 MB/s accelerates data access
- Random read 1,000,000 IOPS handles heavy queue depths
- 128-layer V-NAND TLC enables high density and endurance
- E1.S 9.5 mm form factor fits dense server chassis
Спецификации
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Въпроси за този артикул
Does the E1.S form factor fit a standard M.2 slot?
No, this drive uses the E1.S form factor measuring 33.6 x 118.75 x 9.5 mm and requires a compatible E1.S bay or adapter; it will not fit an M.2 slot.
What power budget should I plan for this 3.84 TB drive?
The drive draws 11 W during sequential reads and 13.5 W during sequential writes, so ensure your backplane and cooling can sustain at least 13.5 W per drive.
What sustained write throughput can I expect in a PCIe Gen 4 x4 server?
Sequential write speed is rated at 4000 MB/s and random write at 190000 IOPS when connected to a PCIe Gen 4 x4 interface.
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