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Small rectangular mSATA SSD with green circuit board and black label

SAMSUNG

SAMSUNG 860 EVO mSATA 500GB SATA III internal SSD MZ-M6E500BW

SKU CH-BGFW-QA7M3

A 500GB mSATA internal SSD using V-NAND 3-bit MLC and a Samsung MJX controller, delivering up to 550 MBps sequential read and 520 MBps write speeds

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactormSATA
  • Capacity500GB
  • Memory ComponentsV-NAND 3-bit MLC
  • InterfaceSATA III

Options 500GB

  • Up to 550 MB/s sequential read for fast boot and load times
  • Up to 520 MB/s sequential write for quick file saves
  • 500 GB capacity with V-NAND 3-bit MLC for ample storage
  • 97,000 IOPS random read at QD32 for responsive multitasking
  • 1,500,000 hours MTBF for long-term reliability

860 EVO mSATA 500GB

The Samsung 860 EVO mSATA 500GB is a SATA III internal solid-state drive built for mainstream PCs and laptops. It uses V-NAND 3-bit MLC memory and the Samsung MJX controller to deliver reliable everyday performance. The mSATA form factor suits older ultrabooks and compact desktops that lack 2.5-inch bays.

V-NAND and 512GB DDR4 cache

V-NAND 3-bit MLC technology increases density and endurance over planar NAND, while the onboard 512GB Low Power DDR4 SDRAM cache accelerates burst workloads. Device Sleep, S.M.A.R.T. and TRIM support keep power draw low at 50 mW idle and extend drive health monitoring. Average active power is 2.5 W with a 4.5 W burst maximum.

500GB capacity with 550 MBps reads

Sequential reads reach 550 MBps and writes 520 MBps, while 4 KB random reads hit 97,000 IOPS at QD32 and 10,000 IOPS at QD1. Random writes reach 88,000 IOPS at QD32 and 42,000 IOPS at QD1. The 500GB volume handles operating systems, applications and large media libraries, though sustained heavy write workloads will saturate the SATA III link. MTBF is rated at 1,500,000 hours.

Helstu kostir

  • Up to 550 MB/s sequential read for fast boot and load times
  • Up to 520 MB/s sequential write for quick file saves
  • 500 GB capacity with V-NAND 3-bit MLC for ample storage
  • 97,000 IOPS random read at QD32 for responsive multitasking
  • 1,500,000 hours MTBF for long-term reliability

Tæknilýsing

BrandSAMSUNG
Series860 EVO Series
ModelMZ-M6E500BW
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactormSATA
Capacity500GB
Memory ComponentsV-NAND 3-bit MLC
InterfaceSATA III
ControllerSamsung MJX
CacheSamsung 512GB Low Power DDR4 SDRAM
Max Sequential ReadUp to 550 MBps
Max Sequential WriteUp to 520 MBps
4KB Random ReadQD32: Up to 97,000 IOPS
QD1: Up to 10,000 IOPS
4KB Random WriteQD32: Up to 88,000 IOPS
QD1: Up to 42,000 IOPS
MTBF1,500,000 hours
FeaturesThe SSD you trust
The newest edition to the world's best-selling SATA SSD series, the Samsung 860 EVO is specially designed to enhance performance of mainstream PCs and laptops. With the latest V-NAND technology, this fast and reliable SSD comes in a wide range of compatible form factors and capacities.
Enhanced performance
Speeds are consistent, even under heavy workloads and multi-tasking allowing for faster file transfer. The 860 EVO performs at sequential read speeds up to 550 MB/s with Intelligent TurboWrite technology, and sequential write speeds up to 520 MB/s.
Boosted enduran
Power Consumption (Idle)50 mW
Power Consumption (Active)Average: 2.5W
Maximum: 4.5W (Burst mode)
Operating Temperature0°C ~ +70°C
Storage Temperature-45°C ~ +85°C
Operating Humidity5% to 95% RH
Max Shock Resistance1,500G & 0.5 ms (Half sine)
Max Vibration Resistance20G
Height4.83mm
Width29.97mm
Depth50.80mm
Weight81.65g

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Spurningar um þessa vöru

How long is the drive rated to run before a failure becomes likely?

The MTBF is 1,500,000 hours, which is the standard reliability metric for this class of SATA SSD.

What limits sustained write performance once the drive heats up?

Sequential write tops out at 520 MBps and the controller will throttle if the temperature reaches 70 °C.

How much power does it draw during an all-day workload?

Average active consumption is 2.5 W with a 4.5 W burst ceiling; idle drops to 50 mW.

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