SAMSUNG
SAMSUNG 860 EVO mSATA 250GB internal SSD
- Internal Solid Stat…
- Consumer
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SAMSUNG
SAMSUNG 860 EVO mSATA 500GB SATA III internal SSD MZ-M6E500BW
A 500GB mSATA internal SSD using V-NAND 3-bit MLC and a Samsung MJX controller, delivering up to 550 MBps sequential read and 520 MBps write speeds
- Device TypeInternal Solid State Drive (SSD)
- Used ForConsumer
- Form FactormSATA
- Capacity500GB
- Memory ComponentsV-NAND 3-bit MLC
- InterfaceSATA III
- Up to 550 MB/s sequential read for fast boot and load times
- Up to 520 MB/s sequential write for quick file saves
- 500 GB capacity with V-NAND 3-bit MLC for ample storage
- 97,000 IOPS random read at QD32 for responsive multitasking
- 1,500,000 hours MTBF for long-term reliability
860 EVO mSATA 500GB
The Samsung 860 EVO mSATA 500GB is a SATA III internal solid-state drive built for mainstream PCs and laptops. It uses V-NAND 3-bit MLC memory and the Samsung MJX controller to deliver reliable everyday performance. The mSATA form factor suits older ultrabooks and compact desktops that lack 2.5-inch bays.
V-NAND and 512GB DDR4 cache
V-NAND 3-bit MLC technology increases density and endurance over planar NAND, while the onboard 512GB Low Power DDR4 SDRAM cache accelerates burst workloads. Device Sleep, S.M.A.R.T. and TRIM support keep power draw low at 50 mW idle and extend drive health monitoring. Average active power is 2.5 W with a 4.5 W burst maximum.
500GB capacity with 550 MBps reads
Sequential reads reach 550 MBps and writes 520 MBps, while 4 KB random reads hit 97,000 IOPS at QD32 and 10,000 IOPS at QD1. Random writes reach 88,000 IOPS at QD32 and 42,000 IOPS at QD1. The 500GB volume handles operating systems, applications and large media libraries, though sustained heavy write workloads will saturate the SATA III link. MTBF is rated at 1,500,000 hours.
Besonderheiten
- Up to 550 MB/s sequential read for fast boot and load times
- Up to 520 MB/s sequential write for quick file saves
- 500 GB capacity with V-NAND 3-bit MLC for ample storage
- 97,000 IOPS random read at QD32 for responsive multitasking
- 1,500,000 hours MTBF for long-term reliability
Technische Daten
| Brand | SAMSUNG |
|---|---|
| Series | 860 EVO Series |
| Model | MZ-M6E500BW |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | mSATA |
| Capacity | 500GB |
| Memory Components | V-NAND 3-bit MLC |
| Interface | SATA III |
| Controller | Samsung MJX |
| Cache | Samsung 512GB Low Power DDR4 SDRAM |
| Max Sequential Read | Up to 550 MBps |
| Max Sequential Write | Up to 520 MBps |
| 4KB Random Read | QD32: Up to 97,000 IOPS QD1: Up to 10,000 IOPS |
| 4KB Random Write | QD32: Up to 88,000 IOPS QD1: Up to 42,000 IOPS |
| MTBF | 1,500,000 hours |
| Features | The SSD you trust The newest edition to the world's best-selling SATA SSD series, the Samsung 860 EVO is specially designed to enhance performance of mainstream PCs and laptops. With the latest V-NAND technology, this fast and reliable SSD comes in a wide range of compatible form factors and capacities. Enhanced performance Speeds are consistent, even under heavy workloads and multi-tasking allowing for faster file transfer. The 860 EVO performs at sequential read speeds up to 550 MB/s with Intelligent TurboWrite technology, and sequential write speeds up to 520 MB/s. Boosted enduran |
| Power Consumption (Idle) | 50 mW |
| Power Consumption (Active) | Average: 2.5W Maximum: 4.5W (Burst mode) |
| Operating Temperature | 0°C ~ +70°C |
| Storage Temperature | -45°C ~ +85°C |
| Operating Humidity | 5% to 95% RH |
| Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
| Max Vibration Resistance | 20G |
| Height | 4.83mm |
| Width | 29.97mm |
| Depth | 50.80mm |
| Weight | 81.65g |
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SAMSUNG
SAMSUNG 860 EVO mSATA 1TB internal SSD MZ-M6E1T0BW
- Internal Solid Stat…
- Consumer
533,99 $
0.00689758BTC
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How long is the drive rated to run before a failure becomes likely?
The MTBF is 1,500,000 hours, which is the standard reliability metric for this class of SATA SSD.
What limits sustained write performance once the drive heats up?
Sequential write tops out at 520 MBps and the controller will throttle if the temperature reaches 70 °C.
How much power does it draw during an all-day workload?
Average active consumption is 2.5 W with a 4.5 W burst ceiling; idle drops to 50 mW.
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