NEMIX RAM DDR5-5600 2TB (16x128GB) ECC RDIMM CL46 1.1V Supermicro H14SST-G memory upgrade
- 2TB (16 x 128GB)
- 288-Pin DDR5 RDIMM
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A-Tech
16 GB DDR3 1066 ECC registered DIMM for server and workstation upgrades
This 16GB DDR3 1066 MHz registered ECC module is built for servers and workstations that require error-correcting memory. It replaces Samsung M393B2K70BM1-CF8Q1 and M393B2K70DM0-CF8Q8 parts in compatible systems. The single 240-pin DIMM operates at standard 1.5V voltage with CL3 latency. It is not for desktop boards that only accept unbuffered non-ECC memory.
The module runs at the standard DDR3 voltage of 1.50V, keeping power draw consistent with original server specifications. Registered buffering reduces electrical load on the memory controller during heavy workloads. ECC circuitry adds minimal overhead while correcting single-bit errors automatically. No active cooling is required beyond normal chassis airflow in a server enclosure.
The 240-pin DIMM uses a 4Rx4 organisation with Samsung chipset components for broad compatibility. Registered design ensures signal integrity in multi-module configurations typical of server platforms. Physical keying prevents insertion into incompatible consumer slots. Verify your system supports 16GB registered DDR3 modules before purchase as capacity limits vary by platform.
| Brand | A-Tech |
|---|---|
| Series | Compatible Replacement for Samsung |
| Model | M393B2K70BM1-CF8Q1, M393B2K70DM0-CF8Q8 |
| Capacity | 16GB |
| Speed | DDR3 1066 (PC3 8500) |
| CAS Latency | CL3 |
| Voltage | 1.50V |
| ECC | Yes |
| Buffered/Registered | Registered |
| Rank | 4Rx4 |
| Chipset | Samsung Chipset |
| Features | M393B2K70BM1-CF8Q1, M393B2K70DM0-CF8Q8 |
Align the notch on the module with the key in the 240-pin slot, press straight down until both side clips click, and confirm the retention tabs lock fully — partial seating is the common error.
No routine maintenance is required; the module either passes POST or it fails, in which case the entire 16GB stick is replaced rather than repaired.
The 1.50V DDR3 voltage ceiling and CL3 latency bound throughput before thermal throttling becomes a factor.
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