OWC 16GB DDR4 3200MHz CL22 1.2V 260pin SODIMM Alienware X17 R1
- 16GB
- 260-Pin DDR4 Non-EC…
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Computer Memory Solutions
An 8 GB DDR3L SODIMM running at 1600 MHz with CL11 timing and 1.35 V, built for HP 15 Series notebooks
This 8GB DDR3L SODIMM module is built for HP 15 Series notebooks including the 15-R017Tu, 15-R030Nr, 15-R036Tu and 15-R037Tu. It delivers a direct memory increase for systems that accept a single 204-pin stick. Buyers needing ECC support, registered DIMMs or capacities beyond 8GB per slot should look elsewhere.
Operating at 1.35V, the DDR3L stick draws less power than standard DDR3 modules, helping to limit heat output and preserve battery life in compatible laptops. With no heat spreader fitted, the module relies on the notebook's internal airflow, so thermal behaviour matches the original equipment design.
The unbuffered, non-ECC 2Rx8 stick fits a single 204-pin SODIMM socket and runs at 1600MHz with CL11 11-11-11 timings. Product appearance may vary from the reference image, but the form factor and pin-out remain identical for a straightforward drop-in upgrade.
| Brand | Computer Memory Solutions |
|---|---|
| Model | CM10246412800SODRL |
| Capacity | 8GB |
| Type | 204-Pin DDR3 SO-DIMM |
| Speed | DDR3L 1600 (PC3L 12800) |
| CAS Latency | CL11 |
| Timing | 11-11-11 |
| Voltage | 1.35V |
| ECC | No |
| Buffered/Registered | Unbuffered |
| Rank | 2Rx8 |
| Chipset | Major Brand Chipset |
| Heat Spreader | No |
| Compatible System | Hp 15 Series 15-R017Tu 15-R030Nr 15-R036Tu 15-R037Tu |
| Package Content | 1 Memory RAM Stick |
Power off, unplug, remove the battery, open the memory cover, insert the module at an angle until the gold contacts disappear, then press down until both side clips click — the step most people miss is fully seating it so both clips engage.
No routine maintenance is required; the module has no heat spreader or moving parts, and the major-brand chips are rated for continuous operation at CL11 11-11-11 timing.
The single 2Rx8 rank and CL11 latency set the bandwidth ceiling, so memory throughput saturates before thermal or voltage limits appear.
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