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Rectangular black metal 2.5 inch SATA SSD with Samsung label

SAMSUNG

SAMSUNG 870 EVO MZ-77E8T0B/AM 2.5" 8TB SATA III internal SSD

SKU CH-5TWV-ZMGGM MPN MZ-77E8T0B/AM

SATA III internal SSD with 8 TB of V-NAND storage, up to 560 MBps read and 530 MBps write speeds, AES 256-bit encryption and a 4 800 TBW endurance rating

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form Factor2.5"
  • Capacity8TB
  • Memory ComponentsV-NAND
  • InterfaceSATA III

Options 8TB

  • Massive 8TB capacity stores huge media libraries and archives
  • SATA III interface delivers up to 560 MBps sequential read speeds
  • AES 256-bit encryption with TCG Opal 2.0 protects sensitive data
  • 4800 TBW endurance rating supports heavy daily workloads
  • 1,500,000-hour MTBF ensures long-term drive reliability

Capacity and audience

The Samsung 870 EVO MZ-77E8T0B/AM is a 2.5 inch internal SSD with an 8TB capacity and a SATA III interface. It uses V-NAND memory and includes an 8GB Low Power DDR4 cache. The drive targets consumers who need large storage for content creation or general professional workloads.

Thermals, noise and power

With no moving parts the drive runs silently in normal use. Idle power draw is rated at 2.2W or 2.6W depending on the operating state, while active consumption is listed at 40mW. AES 256-bit encryption with TCG Opal 2.0 and IEEE 1667 support adds security without increasing thermal output.

Sustained load behaviour

Sequential reads reach up to 560 MBps and writes up to 530 MBps under continuous workloads. The drive is rated for 4800 TBW and an MTBF of 1,500,000 hours, indicating durability for long-term heavy writing. Samsung Magician software helps monitor health and maintain consistent performance over time.

Høydepunkter

  • Massive 8TB capacity stores huge media libraries and archives
  • SATA III interface delivers up to 560 MBps sequential read speeds
  • AES 256-bit encryption with TCG Opal 2.0 protects sensitive data
  • 4800 TBW endurance rating supports heavy daily workloads
  • 1,500,000-hour MTBF ensures long-term drive reliability

Spesifikasjoner

BrandSAMSUNG
Series870 EVO Series
ModelMZ-77E8T0B/AM
Part NumberMZ-77E8T0B/AM
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form Factor2.5"
Capacity8TB
Memory ComponentsV-NAND
InterfaceSATA III
ProtocolSATA
CacheSamsung 8GB Low Power DDR4 SDRAM
EncryptionAES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive (IEEE1667)
Max Sequential ReadUp to 560 MBps
Max Sequential WriteUp to 530 MBps
Terabytes Written (TBW)4800TB
MTBF1,500,000 hours
FeaturesTHE SSD ALL-STAR - The latest 870 EVO has indisputable performance, reliability and compatibility built upon Samsung's pioneering technology.
EXCELLENCE IN PERFORMANCE - Enjoy professional-level SSD performance with 870 EVO, which maximizes the SATA interface limit to 560/530 MB/s sequential speeds, accelerates write speeds and maintains long-term high performance with a larger variable buffer.
INDUSTRY-DEFINING RELIABILITY - Meet the demands of every task - from everyday computing to 8K video processing, with up to 2,400 TBW.
MORE COMPATIBLE THAN EVER - 870 EVO has been compatibilit
Power Consumption (Idle)2.2W / 2.6W
Power Consumption (Active)40mW
Height6.80mm
Width69.90mm
Depth100.00mm
Weight48g
Fraktvekt0.11 kg
Pakkestørrelse165 × 97 × 20 mm

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Spørsmål om denne varen

How do I install the 2.5" 8TB SATA III drive and what step is often missed?

Connect the drive to a SATA data cable and a SATA power connector, then enable AHCI mode in the BIOS so the operating system can use the Samsung 8GB Low Power DDR4 cache and AES 256-bit encryption correctly.

What maintenance or replacement will the 8TB V-NAND SSD need over its life?

The drive has a 4800 TBW endurance rating and 1,500,000-hour MTBF; no user-serviceable parts exist, so replacement is only required if the TBW limit is reached or the drive fails.

What limit appears first during sustained heavy writes on this 8TB SATA SSD?

The sequential write speed caps at 530 MBps, and the 4800 TBW endurance budget is the first hard limit reached under continuous write workloads.

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