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Green circuit board with black metal heatsink and gold edge connector

SanDisk

SanDisk Optimus GX PRO 850X 2TB M.2 2280-S3-M internal SSD SDSP81200TAH-000E0

SKU CH-FMWA-BD8DY MPN SDSP81200TAH-000E0

2TB PCI-Express 4.0 x4 internal SSD with integrated heatsink delivers up to 7300 MBps sequential read and 6600 MBps write for demanding workloads

  • Device TypeInternal Solid State Drive (SSD)
  • Form FactorM.2 2280-S3-M
  • Capacity2TB
  • Memory Components3D NAND TLC
  • InterfacePCI-Express 4.0 x4
  • ProtocolNVMe 1.4

Capacity 2TB w/ Heatsink

  • Sequential read up to 7300 MBps speeds large file loads
  • Sequential write up to 6600 MBps accelerates content creation
  • Random read up to 1200000 IOPS keeps multitasking responsive
  • 1200TB written endurance supports heavy workloads
  • Built-in heatsink maintains performance under sustained use

PCIe 4.0 x4 NVMe SSD for demanding workloads

The SanDisk Optimus GX PRO 850X is a 2TB M.2 2280-S3-M drive built on 3D NAND TLC with a PCIe 4.0 x4 interface and NVMe 1.4 protocol. It delivers up to 7300 MBps sequential read and 6600 MBps sequential write alongside 1200000 IOPS random read and 1100000 IOPS random write. The 1200TB endurance rating and 1750000-hour MTBF suit heavy write workloads and long-term reliability needs.

Integrated heatsink keeps thermals in check

A factory-fitted heatsink manages heat during sustained transfers so the controller stays within its 0°C to 85°C operating window. Idle power draws only 5 mW while active averages reach 7.5W for reads and 7.0W for writes. With no moving parts the drive runs silently and resists shock up to 1500G and vibration up to 5 gRMS across three axes.

DRAM-less design uses SLC caching for speed

The absence of a DRAM buffer is offset by an SLC caching scheme that absorbs burst writes and maintains high throughput for typical consumer and prosumer tasks. NVMe 1.4 support enables standard namespace management and power-state transitions without extra software. The package includes only the drive and heatsink; no mounting screws, cables or proprietary utilities are bundled.

Høydepunkter

  • Sequential read up to 7300 MBps speeds large file loads
  • Sequential write up to 6600 MBps accelerates content creation
  • Random read up to 1200000 IOPS keeps multitasking responsive
  • 1200TB written endurance supports heavy workloads
  • Built-in heatsink maintains performance under sustained use

Spesifikasjoner

BrandSanDisk
SeriesOptimus GX PRO 850X
ModelSDSP81200TAH-000E0
Device TypeInternal Solid State Drive (SSD)
Form FactorM.2 2280-S3-M
Capacity2TB
Memory Components3D NAND TLC
InterfacePCI-Express 4.0 x4
ProtocolNVMe 1.4
CacheNo DRAM (SLC)
Max Sequential ReadUp to 7300 MBps
Max Sequential WriteUp to 6600 MBps
4KB Random ReadUp to 1,200,000 IOPS
4KB Random WriteUp to 1,100,000 IOPS
Terabytes Written (TBW)1200TB
MTBF1,750,000 hours
HeatSinkwith HeatSink
Power Consumption (Idle)5 mW
Power Consumption (Active)Average Active Power Read: 7.5W
Average Active Power Write: 7.0W
Operating Temperature0°C ~ +85°C
Storage Temperature-40°C ~ +85°C
Max Shock Resistance1,500G @ 0.5 ms half-sine
Max Vibration ResistanceOperating Vibration: 5 gRMS, 10-2000 Hz, 3 axes
Non-operating Vibration: 4.9 gRMS, 7-800 Hz, 3 axes
Height8.9mm
Width23mm
Depth80mm
Weight24g
Fraktvekt0.05 kg
Pakkestørrelse127 × 102 × 1 mm

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Spørsmål om denne varen

How do I install the M.2 2280-S3-M drive and what step do people get wrong?

Insert the drive at a 30-degree angle into the PCI-Express 4.0 x4 slot until the gold contacts disappear, then press down and secure with the single motherboard screw; the common error is tightening the screw before the drive is fully seated, which can bend the PCB.

What maintenance or replacement will the 3D NAND TLC SSD need later?

No scheduled maintenance is required; monitor the 1200TB TBW counter in SMART tools and replace the drive when the percentage approaches 100 per cent or if the media‑error count rises.

What limit appears first under sustained heavy writes on this PCI-Express 4.0 x4 drive?

The controller will throttle write speed once the NAND temperature nears the 85°C operating limit, reducing throughput until the heatsink brings the temperature back down.

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