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M.2 2280 SSD with black metal heatsink, exposed controller and NAND chips visible

SanDisk

SanDisk WDS100T1XHM-00CMT0 1TB internal SSD

SKU CH-38P3-MBCD6 MPN WDS100T1XHM-00CMT0

PCIe 5.0 x4 NVMe drive with heatsink delivers up to 14,900 MB/s reads and 11,000 MB/s writes for gaming and content creation

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity1TB
  • InterfacePCI-Express 5.0 x4
  • ProtocolNVMe

Options 1TB w/ Heatsink

  • Breakneck PCIe 5.0 speed delivers 14900 MB/s reads
  • 11000 MB/s writes cut game and render load times
  • 1 GB DRAM cache sustains high random IOPS
  • Integrated heatsink maintains peak throughput during long sessions
  • 600 TBW and 1750000-hour MTTF ensure long-term endurance

PCIe 5.0 x4 NVMe drive

The SanDisk WDS100T1XHM-00CMT0 is a 1TB internal SSD built for consumer desktops and workstations. It uses the M.2 2280 form factor with a PCI-Express 5.0 x4 interface and NVMe protocol. A 1GB DRAM cache supports sustained throughput for gaming, content creation and AI model loading.

Thermals and power

An integrated heatsink helps maintain performance during extended workloads. Active power draw reaches 6.2W during reads and 7.0W during writes, while idle sleep state drops to 5 mW. The drive operates from 0°C to 85°C.

Build and connectors

The single-sided M.2 2280 module fits standard motherboard slots and includes the heatsink in the same profile. Rated for 600TB written and 1750000 hours MTTF, the TLC 3D NAND is backed by the WD_BLACK Dashboard for health monitoring and Game Mode 2.0 on Windows.

Høydepunkter

  • Breakneck PCIe 5.0 speed delivers 14900 MB/s reads
  • 11000 MB/s writes cut game and render load times
  • 1 GB DRAM cache sustains high random IOPS
  • Integrated heatsink maintains peak throughput during long sessions
  • 600 TBW and 1750000-hour MTTF ensure long-term endurance

Spesifikasjoner

BrandWestern Digital
ModelWDS100T1XHM-00CMT0
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity1TB
InterfacePCI-Express 5.0 x4
ProtocolNVMe
Cache1GB DRAM
Max Sequential ReadUp to 14900 MBps
Max Sequential WriteUp to 11000 MBps
4KB Random ReadUp to 1,600,000 IOPS
4KB Random WriteUp to 2,400,000 IOPS
Terabytes Written (TBW)600TB
MTTF1,750,000 Hours
HeatSinkwith HeatSink
FeaturesExperience the breakneck speed of PCIe Gen 5
Drastically enhance your gaming and content creation experience with the speed of PCIe Gen 5.0x4 NVMe M.2 SSD technology - perfect for gaming, content creation, and loading models for AI-powered applications.
Blistering speeds for intense tasks
With the help of our nCache 4.0 feature, the WD_BLACK SN8100 SSD reaches sequential read speeds up to an astonishing 14,900MB/s, sequential write speeds up to 14,000MB/s, and over 2,300,000 IOPS of random performance (2TB-4TB models).
Designed to perform
Our latest TLC 3D CBA NAND technology provide
Power Consumption (Idle)Sleep (PS4): 5 mW
Power Consumption (Active)6.2W Read / 7.0W Write
Operating Temperature32°F to 185°F (0°C to 85°C)
Storage Temperature-40°F to 185°F (-40°C to 85°C)
Max Shock Resistance1,500G @0.5 ms half sine
Max Vibration ResistanceOperating Vibration: 5 gRMS, 10-2000 Hz, 3 axes
Non-operating Vibration: 4.9 gRMS, 7-800 Hz, 3 axes
Height11.25mm
Width80mm
Depth22mm
Weight31.2g
Fraktvekt0.07 kg
Pakkestørrelse127 × 102 × 19 mm

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Spørsmål om denne varen

Will this M.2 2280 drive with its included heatsink fit in my laptop or small-form-factor desktop?

The drive uses the standard M.2 2280 form factor, but the attached heatsink adds height; verify your device has enough clearance above the M.2 slot before installing.

Does my motherboard need PCIe 5.0 to use this SSD, and what speeds will I see on PCIe 4.0?

The SSD works in PCIe 4.0 and 3.0 slots, though sequential read and write speeds will be limited to the slot's maximum bandwidth rather than the drive's rated 14900 MBps read and 11000 MBps write.

Is the 1 GB DRAM cache and 600 TBW rating sufficient for heavy gaming and content-creation workloads?

Yes, the 1 GB DRAM cache helps sustain high random performance up to 1600000 read and 2400000 write IOPS, while the 600 TBW endurance rating supports extensive daily writes over the drive's 1750000-hour MTTF lifespan.

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