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Seuratut tuotteet Kirjaudu sisään

GIGABYTE

GIGABYTE GP-GSM2NE3256GNTD 256GB M.2 2280 NVMe internal SSD

SKU CH-HN4W-44GH7 MPN GP-GSM2NE3256GNTD

256 GB PCIe 3.0 x4 NVMe M.2 2280 SSD with up to 1700 MB/s read, 1100 MB/s write, 300 TBW and HMB support

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity256GB
  • InterfacePCI-Express 3.0 x4, NVMe 1.3
  • Max Sequential ReadUp to 1700 MBps

Options 256GB

  • Faster boot and app loading with up to 1700 MB/s sequential read
  • Smooth multitasking backed by up to 1100 MB/s sequential write
  • Responsive random access reaching 180000 read IOPS and 250000 write IOPS
  • Long-term reliability rated at 300 TBW and 1500000 hours MTBF
  • Low idle power of 1.9 mW helps extend laptop battery life

256GB PCIe 3.0 NVMe SSD

The GIGABYTE GP-GSM2NE3256GNTD is a 256GB M.2 2280 internal solid-state drive built for everyday desktop and laptop workloads. It uses a PCI-Express 3.0 x4 interface with NVMe 1.3 to deliver sequential reads up to 1700 MBps and writes up to 1100 MBps. Random performance reaches 180000 IOPS read and 250000 IOPS write.

Fits M.2 2280 slots with PCIe 3.0 x4 wiring

The drive plugs directly into an M.2 2280 key-M slot wired for PCI-Express 3.0 x4, requiring no cables or drive bay. Host Memory Buffer support lets the controller borrow a small slice of system DRAM, removing the need for on-board DRAM cache. Power draw stays low at 1.9 mW idle, 2.6W average read and 2.4W write.

300 TBW endurance for light to moderate workloads

The 300 TBW rating and 1500000-hour MTBF provide headroom for operating systems, applications and frequent file transfers. Sustained workloads that exceed the write budget or push the controller near its 70°C operating limit will throttle performance. The drive operates from 0°C to 70°C and survives storage from -40°C to 85°C.

Kohokohdat

  • Faster boot and app loading with up to 1700 MB/s sequential read
  • Smooth multitasking backed by up to 1100 MB/s sequential write
  • Responsive random access reaching 180000 read IOPS and 250000 write IOPS
  • Long-term reliability rated at 300 TBW and 1500000 hours MTBF
  • Low idle power of 1.9 mW helps extend laptop battery life

Tekniset tiedot

BrandGIGABYTE
ModelGP-GSM2NE3256GNTD
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity256GB
InterfacePCI-Express 3.0 x4, NVMe 1.3
Max Sequential ReadUp to 1700 MBps
Max Sequential WriteUp to 1100 MBps
4KB Random ReadUp to 180,000 IOPS
4KB Random WriteUp to 250,000 IOPS
MTBF1,500,000 hours
Features300 TBW
HMB (Host Memory Buffer) supported
TRIM & S.M.A.R.T supported
Power Consumption (Idle)1.9 mW
Power Consumption (Active)Avg. read: 2.6W
Write: 2.4W
Operating Temperature0°C ~ +70°C
Storage Temperature-40°C ~ +85°C
Height2.30mm
Width22.00mm
Depth80.00mm
Lähetyspaino0.02 kg
Pakkauksen mitat140 × 81 × 15 mm

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Kysymyksiä tästä tuotteesta

How long before the 300 TBW endurance rating is reached under heavy daily writes?

The drive is rated for 300 TBW, so sustained heavy writing will reach that limit after roughly 300 terabytes of total data written.

What are the active power draw and operating temperature range when the SSD runs continuously?

Active read power averages 2.6W, write power 2.4W, and the operating temperature range is 0°C to 70°C.

Does my motherboard need an M.2 2280 slot with PCIe 3.0 x4 and NVMe 1.3 support for this drive to work?

Yes, the drive requires an M.2 2280 slot that supports PCIe 3.0 x4 and NVMe 1.3.

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