SAMSUNG 860 EVO M.2 2280 1TB internal SSD MZ-N6E250BW
- M.2 2280
- 1TB
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SAMSUNG
M.2 2280 1TB NVMe SSD delivers up to 7150 MB/s read and 6450 MB/s write with 400 TBW endurance
Capacity 1TB
The Samsung 990 M.2 2280 1TB drive uses a PCIe 4.0 x4 interface and an in-house controller with Samsung V NAND to reach sequential reads up to 7,150 MB/s and writes up to 6,450 MB/s. Random performance hits 700,000 IOPS read and 1,100,000 IOPS write. It suits game collectors, DIY PC builders and digital archivists who need fast load times and responsive project exports.
The 2280 form factor fits standard desktop M.2 slots keyed for PCIe 4.0 x4. No cables or brackets are required; the drive seats directly on the motherboard. Common issues arise when the slot shares bandwidth with other devices or when the BIOS lacks NVMe boot support, so verify platform compatibility before fitting.
The 1.0 TB capacity holds large game libraries, 4K footage and long-term archives without constant offloading. Rated at 400 TBW, the drive sustains heavy daily writes for years. Idle power drops to 55 mW in PS3 and 3 mW in PS4 L1.2, while hardware AES 256 encryption plus TCG Opal 2.0 and IEEE 1667 protect stored data.
| Brand | SAMSUNG |
|---|---|
| Series | 990 |
| Model | MZ-V9V1T0BW |
| Part Number | MZ-V9V1T0BW |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 1TB |
| Memory Components | Samsung V NAND |
| Interface | PCI-Express 4.0 x4 |
| Protocol | NVMe 2.0 |
| Controller | In-House Controller |
| Cache | HMB (Host Memory Buffer) |
| Encryption | Class 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667) |
| Max Sequential Read | Up to 7,150 MB/s |
| Max Sequential Write | Up to 6,450 MB/s |
| 4KB Random Read | Up to 700,000 IOPS |
| 4KB Random Write | Up to 1,100,000 IOPS |
| Terabytes Written (TBW) | 400TB |
| Power Consumption (Idle) | PS3 APST on / PS4 L1.2: Typical 55mW / Typical 3mW |
| Power Consumption (Active) | Read/Write, Average: 4.0W / 3.7W |
| Height | 2.38mm |
| Width | 22.15mm |
| Depth | 80.15mm |
| Weight | 6g |
Andre versjoner av denne modellen
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Run a benchmark such as CrystalDiskMark on the MZ-V9V1T0BW and compare the sequential read result to the 7,150 MB/s specification.
The box contains the MZ-V9V1T0BW SSD only; a compatible M.2 slot with PCIe 4.0 x4 support and a motherboard standoff screw are required but not included.
The 1TB model provides 1.0 TB of V-NAND storage with 400 TBW endurance, suitable for extensive game collections and high-resolution media archives.
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