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Green rectangular circuit board with gold edge connector and black controller chip, M.2 2280 form factor

SAMSUNG

SAMSUNG 990 M.2 2280 1TB internal SSD

SKU CH-GWTX-7NWTE

M.2 2280 1TB NVMe SSD delivers up to 7150 MB/s read and 6450 MB/s write with 400 TBW endurance

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity1TB
  • Memory ComponentsSamsung V NAND
  • InterfacePCI-Express 4.0 x4

Capacity 1TB

  • Up to 7,150 MB/s sequential read speeds load games and large files quickly
  • Up to 6,450 MB/s sequential write speeds accelerate project exports and file transfers
  • Up to 700,000 IOPS random read and 1,100,000 IOPS random write deliver responsive multitasking
  • 400 TBW endurance rating supports heavy workloads and long-term data storage
  • 38% improved performance per watt over the 990 PRO extends laptop battery life during intensive tasks

Speed for games and creative work

The Samsung 990 M.2 2280 1TB drive uses a PCIe 4.0 x4 interface and an in-house controller with Samsung V NAND to reach sequential reads up to 7,150 MB/s and writes up to 6,450 MB/s. Random performance hits 700,000 IOPS read and 1,100,000 IOPS write. It suits game collectors, DIY PC builders and digital archivists who need fast load times and responsive project exports.

Straightforward M.2 installation

The 2280 form factor fits standard desktop M.2 slots keyed for PCIe 4.0 x4. No cables or brackets are required; the drive seats directly on the motherboard. Common issues arise when the slot shares bandwidth with other devices or when the BIOS lacks NVMe boot support, so verify platform compatibility before fitting.

One terabyte with 400 TBW endurance

The 1.0 TB capacity holds large game libraries, 4K footage and long-term archives without constant offloading. Rated at 400 TBW, the drive sustains heavy daily writes for years. Idle power drops to 55 mW in PS3 and 3 mW in PS4 L1.2, while hardware AES 256 encryption plus TCG Opal 2.0 and IEEE 1667 protect stored data.

I korthet

  • Up to 7,150 MB/s sequential read speeds load games and large files quickly
  • Up to 6,450 MB/s sequential write speeds accelerate project exports and file transfers
  • Up to 700,000 IOPS random read and 1,100,000 IOPS random write deliver responsive multitasking
  • 400 TBW endurance rating supports heavy workloads and long-term data storage
  • 38% improved performance per watt over the 990 PRO extends laptop battery life during intensive tasks

Specifikationer

BrandSAMSUNG
Series990
ModelMZ-V9V1T0BW
Part NumberMZ-V9V1T0BW
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity1TB
Memory ComponentsSamsung V NAND
InterfacePCI-Express 4.0 x4
ProtocolNVMe 2.0
ControllerIn-House Controller
CacheHMB (Host Memory Buffer)
EncryptionClass 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667)
Max Sequential ReadUp to 7,150 MB/s
Max Sequential WriteUp to 6,450 MB/s
4KB Random ReadUp to 700,000 IOPS
4KB Random WriteUp to 1,100,000 IOPS
Terabytes Written (TBW)400TB
Power Consumption (Idle)PS3 APST on / PS4 L1.2: Typical 55mW / Typical 3mW
Power Consumption (Active)Read/Write, Average: 4.0W / 3.7W
Height2.38mm
Width22.15mm
Depth80.15mm
Weight6g

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Frågor om den här produkten

How can I confirm the Samsung 990 1TB is performing at its rated 7,150 MB/s read speed after installation?

Run a benchmark such as CrystalDiskMark on the MZ-V9V1T0BW and compare the sequential read result to the 7,150 MB/s specification.

What components are included with the Samsung 990 M.2 2280 1TB drive and what must be purchased separately?

The box contains the MZ-V9V1T0BW SSD only; a compatible M.2 slot with PCIe 4.0 x4 support and a motherboard standoff screw are required but not included.

Which capacity of the Samsung 990 series should I choose for a large game library and 4K footage archive?

The 1TB model provides 1.0 TB of V-NAND storage with 400 TBW endurance, suitable for extensive game collections and high-resolution media archives.

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