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Проследени артикули Вход
Samsung 9100 PRO 4TB M.2 2280 internal SSD, bare circuit board with black controller and NAND chips

SAMSUNG

SAMSUNG 9100 PRO 4TB internal SSD MZ-VAP4T0B/AM

SKU CH-A1YV-QTKCQ MPN MZ-VAP4T0B/AM

PCIe 5.0 x4 NVMe 2.0 drive with 4TB V-NAND TLC, 14800 MB/s read, 13400 MB/s write, 2200000/2600000 IOPS and 2400 TBW

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity4TB
  • Memory ComponentsSamsung V NAND TLC (V8)
  • InterfacePCI-Express 5.0 x4

Style Without Heatsink

Options 4TB

  • Sequential reads up to 14,800 MB/s accelerate large-file workflows
  • Sequential writes up to 13,400 MB/s keep pace with heavy output
  • Random reads up to 2,200,000 IOPS speed up AI and gaming loads
  • Random writes up to 2,600,000 IOPS sustain high-throughput tasks
  • 4 GB LPDDR4X cache and 964 GB TurboWrite buffer maintain burst performance

Samsung 9100 PRO 4TB PCIe 5.0 NVMe SSD

The Samsung 9100 PRO 4TB is an M.2 2280 internal solid-state drive that uses a PCI-Express 5.0 x4 interface and the NVMe 2.0 protocol. It is built with Samsung V-NAND TLC (V8) memory and an in-house controller paired with a 4GB LPDDR4X cache. The drive targets consumers who need high throughput for AI computing, gaming and heavy-duty workstation workloads.

Upgrade from PCIe 4.0 drives such as the 990 PRO

Moving from a PCIe 4.0 NVMe SSD to this PCIe 5.0 model adds sequential read speeds up to 14800 MBps and sequential write speeds up to 13400 MBps. Random performance reaches 2200000 IOPS read and 2600000 IOPS write. The jump is worth it when workloads saturate the older bus, such as large dataset training, 4K or 8K video editing, or games that stream assets directly from storage.

Sustained load behaviour and thermal control

Intelligent TurboWrite 2.0 provides a 964GB write buffer that absorbs bursts before folding back to native TLC speeds. The controller manages power with a 5.7mW device sleep state and dynamic thermal throttling to maintain performance without a heatsink. Encryption support includes Class 0 AES 256, TCG Opal 2.0 and IEEE 1667 eDrive. Rated endurance is 2400 TBW.

Акценти

  • Sequential reads up to 14,800 MB/s accelerate large-file workflows
  • Sequential writes up to 13,400 MB/s keep pace with heavy output
  • Random reads up to 2,200,000 IOPS speed up AI and gaming loads
  • Random writes up to 2,600,000 IOPS sustain high-throughput tasks
  • 4 GB LPDDR4X cache and 964 GB TurboWrite buffer maintain burst performance

Спецификации

BrandSAMSUNG
Series9100 PRO
ModelMZ-VAP4T0B/AM
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity4TB
Memory ComponentsSamsung V NAND TLC (V8)
InterfacePCI-Express 5.0 x4
ProtocolNVMe 2.0
ControllerIn-House Controller
Cache4GB LPDDR4X
Intelligent TurboWrite 2.0: 964GB
EncryptionClass 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)
Max Sequential ReadUp to 14800 MBps
Max Sequential WriteUp to 13400 MBps
4KB Random ReadUp to 2,200,000 IOPS
4KB Random WriteUp to 2,600,000 IOPS
Terabytes Written (TBW)2400TB
HeatSinkwithout HeatSink
Power Consumption (Idle)5.7mW Device Sleep (L1.2)
Power Consumption (Active)9.0W / 8.2W (Read/Write)
Height2.38mm
Width22.15mm
Depth80.15mm
Weight9g
Тегло на пратката0.05 kg
Размери на опаковката142 × 99 × 23 mm

Други версии на този модел

5 още от същата серия

Същото семейство, различна памет, охладител или честота — сравнете, преди да решите.

Въпроси за този артикул

Does the M.2 2280 form factor fit my motherboard slot?

The drive uses the standard M.2 2280 form factor, so it fits any motherboard with an M.2 key‑M slot that supports PCIe 5.0 x4.

What is the common mistake when installing the 9100 PRO without a heatsink?

Many builders forget to enable the motherboard’s active cooling for the M.2 slot; without airflow the controller can throttle under sustained PCIe 5.0 loads.

When should I expect the 4TB drive to reach its 2400 TBW endurance limit?

At 2400 TBW, the drive is rated for 2.4 petabytes of host writes; typical heavy workloads reach that point after several years of daily multi‑terabyte transfers.

Още от този рафт

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