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Green rectangular circuit board with gold edge connector and black controller chip visible

SAMSUNG

SAMSUNG 9100 PRO 2TB M.2 2280 PCIe 5.0 x4 NVMe 2.0 internal SSD (MZ-VAP2T0B/AM)

SKU CH-6P80-25M0X MPN MZ-VAP2T0B/AM

PCIe 5.0 x4 NVMe 2.0 drive delivers 14700 MBps read and 13400 MBps write with 2TB of V-NAND TLC storage

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity2TB
  • Memory ComponentsSamsung V NAND TLC (V8)
  • InterfacePCI-Express 5.0 x4

Style Without Heatsink

Options 2TB

  • Up to 14,700 MB/s sequential read for faster load times
  • Up to 13,400 MB/s sequential write to move large files quickly
  • 1,850,000 IOPS random read accelerates AI workloads
  • 2,600,000 IOPS random write handles heavy multitasking
  • 1,200 TBW endurance rating supports long-term reliability

2TB PCIe 5.0 NVMe 2.0 SSD

The Samsung 9100 PRO 2TB is an M.2 2280 internal solid state drive built for consumer workloads that demand maximum throughput. It uses Samsung V NAND TLC (V8) memory and an in-house controller with 2GB LPDDR4X cache to deliver sequential reads up to 14700 MBps and writes up to 13400 MBps. The drive targets AI computing, gaming and heavy-duty workstations. It carries a 1200 TBW endurance rating.

Installation and common issues

The drive fits any M.2 2280 slot wired for PCIe 5.0 x4 and requires no cables, but it ships without a heatsink so the motherboard or an aftermarket spreader must provide cooling. Systems limited to PCIe 4.0 will operate at lower speeds, and laptops with tight thermal envelopes may throttle under sustained load. Ensure the BIOS recognises NVMe 2.0 and enable the appropriate PCIe generation in firmware.

Sustained-load behaviour

Intelligent TurboWrite 2.0 provides a 482GB SLC buffer that absorbs large write bursts before the native TLC media takes over. Under continuous heavy I/O the controller manages power at 4.0mW device sleep and dynamically throttles to stay within thermal limits. Random performance holds up to 1850000 read IOPS and 2600000 write IOPS during extended sessions. Hardware AES 256 encryption and TCG Opal 2.0 remain active without measurable latency impact.

Kohokohdat

  • Up to 14,700 MB/s sequential read for faster load times
  • Up to 13,400 MB/s sequential write to move large files quickly
  • 1,850,000 IOPS random read accelerates AI workloads
  • 2,600,000 IOPS random write handles heavy multitasking
  • 1,200 TBW endurance rating supports long-term reliability

Tekniset tiedot

BrandSAMSUNG
Series9100 PRO
ModelMZ-VAP2T0B/AM
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity2TB
Memory ComponentsSamsung V NAND TLC (V8)
InterfacePCI-Express 5.0 x4
ProtocolNVMe 2.0
ControllerIn-House Controller
Cache2GB LPDDR4X
Intelligent TurboWrite 2.0: 482GB
EncryptionClass 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)
Max Sequential ReadUp to 14700 MBps
Max Sequential WriteUp to 13400 MBps
4KB Random ReadUp to 1,850,000 IOPS
4KB Random WriteUp to 2,600,000 IOPS
Terabytes Written (TBW)1200TB
HeatSinkwithout HeatSink
Power Consumption (Idle)4.0mW Device Sleep (L1.2)
Power Consumption (Active)8.1W / 7.9W (Read/Write)
Height2.38mm
Width22.15mm
Depth80.15mm
Weight9g
Lähetyspaino0.05 kg
Pakkauksen mitat142 × 99 × 23 mm

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Kysymyksiä tästä tuotteesta

How do I verify the 9100 PRO is delivering the rated 14700 MBps sequential read speed after installation?

Run a benchmark tool such as CrystalDiskMark using the NVMe 2.0 profile; the sequential read result should approach 14700 MBps and the random read IOPS should reach 1850000 on a PCIe 5.0 x4 platform.

What ships with the MZ-VAP2T0B/AM and what must I source separately?

The package contains the 2TB M.2 2280 drive only; a heatsink is not included and must be purchased separately if your motherboard or laptop lacks integrated cooling.

Which capacity should I choose between the 9100 PRO lineup for AI workloads needing large TurboWrite buffers?

The 2TB model provides a 482GB Intelligent TurboWrite 2.0 region and 1200TB TBW endurance, scaling up from smaller capacities for sustained heavy write workloads.

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