SAMSUNG 9100 PRO MZ-VAP1T0CW 1TB internal SSD
- Internal Solid Stat…
- Consumer
SAMSUNG
PCIe 5.0 x4 NVMe 2.0 drive delivers 14700 MBps read and 13400 MBps write with 2TB of V-NAND TLC storage
Style Without Heatsink
Options 2TB
The Samsung 9100 PRO 2TB is an M.2 2280 internal solid state drive built for consumer workloads that demand maximum throughput. It uses Samsung V NAND TLC (V8) memory and an in-house controller with 2GB LPDDR4X cache to deliver sequential reads up to 14700 MBps and writes up to 13400 MBps. The drive targets AI computing, gaming and heavy-duty workstations. It carries a 1200 TBW endurance rating.
The drive fits any M.2 2280 slot wired for PCIe 5.0 x4 and requires no cables, but it ships without a heatsink so the motherboard or an aftermarket spreader must provide cooling. Systems limited to PCIe 4.0 will operate at lower speeds, and laptops with tight thermal envelopes may throttle under sustained load. Ensure the BIOS recognises NVMe 2.0 and enable the appropriate PCIe generation in firmware.
Intelligent TurboWrite 2.0 provides a 482GB SLC buffer that absorbs large write bursts before the native TLC media takes over. Under continuous heavy I/O the controller manages power at 4.0mW device sleep and dynamically throttles to stay within thermal limits. Random performance holds up to 1850000 read IOPS and 2600000 write IOPS during extended sessions. Hardware AES 256 encryption and TCG Opal 2.0 remain active without measurable latency impact.
| Brand | SAMSUNG |
|---|---|
| Series | 9100 PRO |
| Model | MZ-VAP2T0B/AM |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 2TB |
| Memory Components | Samsung V NAND TLC (V8) |
| Interface | PCI-Express 5.0 x4 |
| Protocol | NVMe 2.0 |
| Controller | In-House Controller |
| Cache | 2GB LPDDR4X Intelligent TurboWrite 2.0: 482GB |
| Encryption | Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667) |
| Max Sequential Read | Up to 14700 MBps |
| Max Sequential Write | Up to 13400 MBps |
| 4KB Random Read | Up to 1,850,000 IOPS |
| 4KB Random Write | Up to 2,600,000 IOPS |
| Terabytes Written (TBW) | 1200TB |
| HeatSink | without HeatSink |
| Power Consumption (Idle) | 4.0mW Device Sleep (L1.2) |
| Power Consumption (Active) | 8.1W / 7.9W (Read/Write) |
| Height | 2.38mm |
| Width | 22.15mm |
| Depth | 80.15mm |
| Weight | 9g |
| 배송 무게 | 0.05 kg |
| 포장 크기 | 142 × 99 × 23 mm |
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Run a benchmark tool such as CrystalDiskMark using the NVMe 2.0 profile; the sequential read result should approach 14700 MBps and the random read IOPS should reach 1850000 on a PCIe 5.0 x4 platform.
The package contains the 2TB M.2 2280 drive only; a heatsink is not included and must be purchased separately if your motherboard or laptop lacks integrated cooling.
The 2TB model provides a 482GB Intelligent TurboWrite 2.0 region and 1200TB TBW endurance, scaling up from smaller capacities for sustained heavy write workloads.
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