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Samsung 9100 PRO 8TB M.2 2280 SSD with black heatsink and gold edge connector

SAMSUNG

SAMSUNG 9100 PRO MZ-VAP8T0CW 8TB M.2 2280 PCIe 5.0 x4 internal SSD

SKU CH-5ESY-XQZ9J MPN MZ-VAP8T0CW

An 8 TB M.2 2280 NVMe 2.0 drive with a built-in heatsink, reaching 14800 MB/s read and 13400 MB/s write

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity8TB
  • Memory ComponentsSamsung V NAND TLC (V8)
  • InterfacePCI-Express 5.0 x4

Style With Heatsink

Options 8TB w/ Heatsink

  • 8TB capacity stores massive projects and libraries
  • PCIe 5.0 x4 delivers up to 14800 MBps sequential read
  • 2,600,000 IOPS random write accelerates heavy workloads
  • Integrated heatsink maintains performance under sustained loads
  • AES 256 encryption with TCG/Opal 2.0 protects data

Capacity and audience

The Samsung 9100 Pro MZ-VAP8T0CW is an 8TB M.2 2280 solid-state drive built for consumer workloads. It connects through a PCI-Express 5.0 x4 interface using the NVMe 2.0 protocol and an in-house controller paired with 8GB of LPDDR4X cache.

Thermals noise and power

The drive ships with an integrated heatsink that keeps the 11.25mm Z-height within the standard M.2 slot. Idle power drops to 9.3mW in Device Sleep L1.2, while active consumption reaches 10.5W during reads and 8.8W during writes.

Sustained load behaviour

Intelligent TurboWrite 2.0 provides a 1928GB write buffer before the native TLC speed takes over. The 4800TBW endurance rating and AES 256 encryption with TCG Opal 2.0 support remain effective during prolonged heavy workloads.

주요 특징

  • 8TB capacity stores massive projects and libraries
  • PCIe 5.0 x4 delivers up to 14800 MBps sequential read
  • 2,600,000 IOPS random write accelerates heavy workloads
  • Integrated heatsink maintains performance under sustained loads
  • AES 256 encryption with TCG/Opal 2.0 protects data

사양

BrandSAMSUNG
Series9100 PRO
ModelMZ-VAP8T0CW
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity8TB
Memory ComponentsSamsung V NAND TLC (V8)
InterfacePCI-Express 5.0 x4
ProtocolNVMe 2.0
ControllerIn-House Controller
Cache8GB LPDDR4X
Intelligent TurboWrite 2.0: 1928GB
EncryptionClass 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)
Max Sequential ReadUp to 14800 MBps
Max Sequential WriteUp to 13400 MBps
4KB Random ReadUp to 2,200,000 IOPS
4KB Random WriteUp to 2,600,000 IOPS
Terabytes Written (TBW)4800TB
HeatSinkwith HeatSink
Power Consumption (Idle)9.3mW Device Sleep (L1.2)
Power Consumption (Active)10.5W / 8.8W (Read/Write)
Height11.25mm
Width25mm
Depth80.15mm
Weight35g
배송 무게0.45 kg
포장 크기142 × 99 × 23 mm

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같은 제품군에서 메모리·쿨러·클럭이 다릅니다 — 결정 전에 비교해 보세요.

이 상품에 대한 질문

How do I install the 9100 PRO with its integrated heatsink, and what clearance issue do builders miss?

The drive is 11.25 mm tall including the heatsink; verify your motherboard M.2 slot has at least that much vertical clearance before securing the single screw.

What maintenance or replacement will the 8TB 9100 PRO need during its service life?

The drive has no user-serviceable parts; its 4800 TBW endurance rating and TCG Opal 2.0 encryption remain valid until the warranty period ends.

Which limit appears first when the 9100 PRO runs sustained heavy writes?

The Intelligent TurboWrite 2.0 buffer fills after 1928 GB of continuous writes, after which sequential write speed drops from the peak 13400 MBps to native TLC throughput.

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