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Green rectangular M.2 2280 SSD with exposed chips and gold edge connector

SAMSUNG

SAMSUNG 9100 PRO 8TB M.2 2280 PCIe 5.0 x4 NVMe internal SSD MZ-VAP8T0B/AM

SKU CH-A561-H04KP MPN MZ-VAP8T0B/AM

8 TB PCIe 5.0 x4 NVMe 2.0 drive with 14800 MB/s read, 13400 MB/s write and 4800 TBW endurance

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity8TB
  • Memory ComponentsSamsung V NAND TLC (V8)
  • InterfacePCI-Express 5.0 x4

Style Without Heatsink

Options 8TB

  • 8TB capacity stores massive project libraries
  • PCIe 5.0 x4 interface delivers up to 14800 MBps sequential read
  • V-NAND TLC with 8GB LPDDR4X cache sustains up to 13400 MBps sequential write
  • 2,200,000 random read IOPS and 2,600,000 random write IOPS accelerate heavy workloads
  • AES 256 encryption plus TCG Opal 2.0 protects data at rest

Samsung 9100 PRO 8TB PCIe 5.0 x4 NVMe SSD

The Samsung 9100 PRO is an internal solid state drive with an 8TB capacity and an M.2 2280 form factor. It connects through a PCIe 5.0 x4 interface using the NVMe 2.0 protocol. The drive uses Samsung V NAND TLC (V8) memory and an in-house controller with 8GB LPDDR4X cache.

Suited to high capacity storage workloads on PCIe

This SSD suits users who need 8TB of fast storage for large media libraries, data sets or game installs on a motherboard with a PCIe 5.0 M.2 slot. Systems limited to PCIe 4.0 or 3.0 will not reach the rated sequential speeds. Builds requiring a pre-fitted heatsink should consider other models.

Sustained write performance backed by large

Intelligent TurboWrite 2.0 provides a 1928GB write buffer that absorbs heavy sequential workloads before the drive transitions to native TLC speeds. The 4800TBW endurance rating reflects the drive's ability to handle long term high volume writes. Idle power draw is 9.3mW in Device Sleep (L1.2).

주요 특징

  • 8TB capacity stores massive project libraries
  • PCIe 5.0 x4 interface delivers up to 14800 MBps sequential read
  • V-NAND TLC with 8GB LPDDR4X cache sustains up to 13400 MBps sequential write
  • 2,200,000 random read IOPS and 2,600,000 random write IOPS accelerate heavy workloads
  • AES 256 encryption plus TCG Opal 2.0 protects data at rest

사양

BrandSAMSUNG
Series9100 PRO
ModelMZ-VAP8T0B/AM
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity8TB
Memory ComponentsSamsung V NAND TLC (V8)
InterfacePCI-Express 5.0 x4
ProtocolNVMe 2.0
ControllerIn-House Controller
Cache8GB LPDDR4X
Intelligent TurboWrite 2.0: 1928GB
EncryptionClass 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)
Max Sequential ReadUp to 14800 MBps
Max Sequential WriteUp to 13400 MBps
4KB Random ReadUp to 2,200,000 IOPS
4KB Random WriteUp to 2,600,000 IOPS
Terabytes Written (TBW)4800TB
HeatSinkwithout HeatSink
Power Consumption (Idle)9.3mW Device Sleep (L1.2)
Power Consumption (Active)10.5W / 8.8W (Read/Write)
Height3.88mm
Width22.15mm
Depth80.15mm
Weight9.5g
배송 무게0.07 kg
포장 크기142 × 99 × 23 mm

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이 상품에 대한 질문

Will this 8 TB M.2 2280 drive fit in a laptop that only has a single-sided M.2 slot?

The drive uses the standard M.2 2280 form factor; physical clearance depends on the laptop's internal height allowance, so check the service manual for maximum module thickness before buying.

My motherboard has a PCIe 4.0 M.2 socket — will the 9100 PRO still work at full capacity?

It will operate at PCIe 4.0 speeds when installed in a PCIe 4.0 slot; the drive is backward-compatible, but sequential throughput will be limited to the slot's 4.0 ceiling rather than the rated 14800 MBps read and 13400 MBps write.

Does the 4800 TBW endurance rating cover heavy video-editing workloads?

The 4800 TBW rating means the drive is warranted for 4800 terabytes of total data written; typical 4K or 8K editing projects write far less per year, so the endurance headroom is substantial for professional workloads.

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