SAMSUNG
SAMSUNG 850 EVO 4TB 2.5" SATA Internal SSD MZ-75E4T0B/AM
A 4TB 2.5" SATA internal SSD with 3D NAND and 4GB DRAM cache delivering up to 540 MBps read and 520 MBps write speeds
- Device TypeInternal Solid State Drive (SSD)
- Used ForConsumer
- Form Factor2.5"
- Capacity4TB
- Memory Components3D NAND
- InterfaceSATA III
- Large 4TB capacity stores extensive data libraries
- Sequential read up to 540 MBps speeds file transfers
- Sequential write up to 520 MBps accelerates content creation
- 3D NAND with 4GB DRAM cache sustains heavy workloads
- 5 million hour MTBF ensures long-term reliability
4TB SATA III 3D NAND SSD
The Samsung 850 EVO MZ-75E4T0B/AM is a 2.5-inch internal solid-state drive built for consumer laptops and desktops. It provides 4TB of storage using 3D NAND memory and a SATA III interface. The MHX controller and 4GB DRAM cache manage read and write operations for everyday workloads.
Samsung Data Migration and Magician software
Free downloadable utilities simplify the transition from an existing drive and provide ongoing management tools. Data Migration copies the operating system and files to the new SSD. Magician enables firmware updates, health monitoring and performance optimisation without additional cost.
Sequential read up to 540 MBps
The drive delivers maximum sequential read speeds of 540 MBps and sequential writes of 520 MBps over SATA III. Random read reaches 98,000 IOPS at queue depth 32 while random write reaches 90,000 IOPS at the same depth. These figures determine whether the drive matches the throughput needs of the target system.
Puncte forte
- Large 4TB capacity stores extensive data libraries
- Sequential read up to 540 MBps speeds file transfers
- Sequential write up to 520 MBps accelerates content creation
- 3D NAND with 4GB DRAM cache sustains heavy workloads
- 5 million hour MTBF ensures long-term reliability
Specificații
| Brand | SAMSUNG |
|---|---|
| Series | 850 EVO |
| Model | MZ-75E4T0B/AM |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | 2.5" |
| Capacity | 4TB |
| Memory Components | 3D NAND |
| Interface | SATA III |
| Controller | MHX |
| Cache | 4GB DRAM |
| Max Sequential Read | Up to 540 MBps |
| Max Sequential Write | Up to 520 MBps |
| 4KB Random Read | Up to 10,000 IOPS (QD1) Up to 98,000 IOPS (QD32) |
| 4KB Random Write | Up to 40,000 IOPS (QD1) Up to 90,000 IOPS (QD32) |
| MTBF | 1,500,000 hours |
| Power Consumption (Idle) | 70mW |
| Power Consumption (Active) | 3.1W/3.6W (Read/Write) |
| Operating Temperature | 0°C ~ +70°C |
| Storage Temperature | -40°C ~ +85°C |
| Operating Humidity | 5% to 95% RH |
| Max Shock Resistance | Non-Operating: 1500G, duration 0.5m sec, 3 axis |
| Max Vibration Resistance | Non-Operating: 20~2000Hz, 20G |
| Height | 6.80mm |
| Width | 69.85mm |
| Depth | 100.00mm |
| Weight | 55.00g |
| Greutate la expediere | 0.13 kg |
| Dimensiunile coletului | 145 × 141 × 22 mm |
Întrebări despre acest articol
How many terabytes can be written to the 4TB 850 EVO before the 3D NAND cells reach their rated endurance limit?
Samsung does not publish a terabytes-written rating for this model; the 1,500,000-hour MTBF and 3D NAND construction indicate high endurance, but no specific write-limit figure is provided.
Under a sustained heavy write workload, will the MHX controller or the SATA III interface hit its throughput ceiling first?
The SATA III link caps sequential writes at 520 MBps, while the MHX controller is specified for up to that same rate, so the interface limit is reached first during long sequential transfers.
What are the typical idle and active power draws of the 4TB 850 EVO when it runs continuously in a desktop?
Idle power is 70 mW; active power averages 3.1 W during reads and 3.6 W during writes, with an operating temperature range of 0 °C to 70 °C.
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