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Rectangular 2.5 inch internal SSD with black metal casing and SATA connectors

SAMSUNG

SAMSUNG 850 EVO 4TB 2.5" SATA Internal SSD MZ-75E4T0B/AM

SKU CH-WASF-MX838 MPN MZ-75E4T0B/AM

A 4TB 2.5" SATA internal SSD with 3D NAND and 4GB DRAM cache delivering up to 540 MBps read and 520 MBps write speeds

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form Factor2.5"
  • Capacity4TB
  • Memory Components3D NAND
  • InterfaceSATA III
  • Large 4TB capacity stores extensive data libraries
  • Sequential read up to 540 MBps speeds file transfers
  • Sequential write up to 520 MBps accelerates content creation
  • 3D NAND with 4GB DRAM cache sustains heavy workloads
  • 5 million hour MTBF ensures long-term reliability

4TB SATA III 3D NAND SSD

The Samsung 850 EVO MZ-75E4T0B/AM is a 2.5-inch internal solid-state drive built for consumer laptops and desktops. It provides 4TB of storage using 3D NAND memory and a SATA III interface. The MHX controller and 4GB DRAM cache manage read and write operations for everyday workloads.

Samsung Data Migration and Magician software

Free downloadable utilities simplify the transition from an existing drive and provide ongoing management tools. Data Migration copies the operating system and files to the new SSD. Magician enables firmware updates, health monitoring and performance optimisation without additional cost.

Sequential read up to 540 MBps

The drive delivers maximum sequential read speeds of 540 MBps and sequential writes of 520 MBps over SATA III. Random read reaches 98,000 IOPS at queue depth 32 while random write reaches 90,000 IOPS at the same depth. These figures determine whether the drive matches the throughput needs of the target system.

Points forts

  • Large 4TB capacity stores extensive data libraries
  • Sequential read up to 540 MBps speeds file transfers
  • Sequential write up to 520 MBps accelerates content creation
  • 3D NAND with 4GB DRAM cache sustains heavy workloads
  • 5 million hour MTBF ensures long-term reliability

Caractéristiques

BrandSAMSUNG
Series850 EVO
ModelMZ-75E4T0B/AM
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form Factor2.5"
Capacity4TB
Memory Components3D NAND
InterfaceSATA III
ControllerMHX
Cache4GB DRAM
Max Sequential ReadUp to 540 MBps
Max Sequential WriteUp to 520 MBps
4KB Random ReadUp to 10,000 IOPS (QD1)
Up to 98,000 IOPS (QD32)
4KB Random WriteUp to 40,000 IOPS (QD1)
Up to 90,000 IOPS (QD32)
MTBF1,500,000 hours
Power Consumption (Idle)70mW
Power Consumption (Active)3.1W/3.6W (Read/Write)
Operating Temperature0°C ~ +70°C
Storage Temperature-40°C ~ +85°C
Operating Humidity5% to 95% RH
Max Shock ResistanceNon-Operating: 1500G, duration 0.5m sec, 3 axis
Max Vibration ResistanceNon-Operating: 20~2000Hz, 20G
Height6.80mm
Width69.85mm
Depth100.00mm
Weight55.00g
Poids d’expédition0.13 kg
Dimensions du colis145 × 141 × 22 mm

Questions sur cet article

How many terabytes can be written to the 4TB 850 EVO before the 3D NAND cells reach their rated endurance limit?

Samsung does not publish a terabytes-written rating for this model; the 1,500,000-hour MTBF and 3D NAND construction indicate high endurance, but no specific write-limit figure is provided.

Under a sustained heavy write workload, will the MHX controller or the SATA III interface hit its throughput ceiling first?

The SATA III link caps sequential writes at 520 MBps, while the MHX controller is specified for up to that same rate, so the interface limit is reached first during long sequential transfers.

What are the typical idle and active power draws of the 4TB 850 EVO when it runs continuously in a desktop?

Idle power is 70 mW; active power averages 3.1 W during reads and 3.6 W during writes, with an operating temperature range of 0 °C to 70 °C.

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