EN-Labs 11-001-366 PCIe x4 USB 3.2 10Gbps 5-port card
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Computer Memory Solutions
A 12GB kit of three 4GB DDR3 1333 ECC Registered DIMMs validated for Dell PowerEdge T620 servers
This 12 GB kit contains three 4 GB DDR3 registered ECC DIMMs validated for the Dell PowerEdge T620. The modules run at 1333 MHz with CL9 timing at 1.5 V and use a 240-pin form factor. They are intended for server workloads that require error correction and registered buffering. The kit is new and supplied as three separate sticks.
The T620 supports both registered and unbuffered ECC memory but forbids mixing the two types within the same system. This kit upgrades from unbuffered ECC or lower-speed registered modules while keeping the memory bank uniform. It also avoids the x4 versus x8 DRAM organisation mismatch that can prevent dual-channel operation when dissimilar 4 GB modules are combined. The jump is worth it when the server needs the full 24-socket capacity with registered DIMMs.
Buyers who need registered ECC memory for a Dell PowerEdge T620 and want a matched three-stick kit will find this compatible. It is not for systems that only accept unbuffered ECC, for builds requiring a different DDR generation, or for configurations that need higher-capacity modules than 4 GB per stick.
| Brand | Computer Memory Solutions |
|---|---|
| Model | CM5127210600ECCR2R4H |
| Capacity | 12GB (3 x 4GB) |
| Type | 240-Pin DDR3 SDRAM |
| Speed | DDR3 1333 (PC3 10600) |
| CAS Latency | CL9 |
| Timing | 9-9-9 |
| Voltage | 1.5V |
| ECC | Yes |
| Buffered/Registered | Registered |
| Rank | 2Rx4 |
| Chipset | Major Brand Chipset |
| Heat Spreader | No |
| Compatible System | Dell Poweredge T620 |
| Package Content | 3 Memory RAM Sticks |
Yes, the 240-pin DDR3 form factor matches the T620's registered DIMM slots exactly.
Populate one DIMM per channel across the three channels of a single processor; do not mix the 2Rx4 x4 modules with x8 modules in the same bank.
Replace modules only if ECC correctable-error counts rise sharply or the system logs uncorrectable memory errors during sustained operation.
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