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Rectangular M.2 2280 SSD with silver heatsink, 80mm long

SAMSUNG

SAMSUNG 9100 PRO MZ-VAP2T0CW 2TB internal SSD

SKU CH-WFDN-W7XJ1 MPN MZ-VAP2T0CW

A 2 TB PCIe 5.0 M.2 2280 SSD with heatsink delivering up to 14 700 MB/s read and 13 400 MB/s write for AI, gaming and workstation workloads

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity2TB
  • Memory ComponentsSamsung V NAND TLC (V8)
  • InterfacePCI-Express 5.0 x4

Style With Heatsink

Options 2TB w/ Heatsink

  • PCIe 5.0 x4 interface delivers up to 14,700 MB/s sequential read speeds
  • NVMe 2.0 protocol with 2GB LPDDR4X cache enables up to 2,600,000 IOPS random write performance
  • 1,200 TBW endurance rating supports heavy AI workloads and gaming sessions
  • Integrated heatsink maintains thermal control during sustained high-speed operation
  • AES 256-bit encryption with TCG/Opal v2.0 protects sensitive data at rest

Built for AI and heavy workloads

The Samsung 9100 Pro MZ-VAP2T0CW is a 2TB NVMe 2.0 drive that uses PCIe 5.0 x4 and Samsung V NAND TLC (V8) memory. An in-house controller and 2GB LPDDR4X cache deliver sequential reads up to 14700 MBps and writes up to 13400 MBps. Random performance reaches 1850000 read IOPS and 2600000 write IOPS. It is aimed at AI computing, gaming and workstation tasks.

Fits M.2 2280 slots with heatsink

The M.2 2280 module measures 80.15mm long, 25mm wide and 8.88mm high, weighing 28g. An integrated heatsink handles thermal control without extra case airflow. AES 256 encryption supports Class 0, TCG/Opal 2.0 and MS eDrive IEEE1667. Intelligent TurboWrite 2.0 provides 482GB of SLC buffer. Compatible PCs, laptops and PlayStation 5 consoles can use it directly.

Sustained speed with smart thermal control

Active power draws 8.1W reading and 7.9W writing while idle sleep drops to 4.0mW in L1.2. The controller balances performance and heat so throughput stays consistent during long renders or model training. Rated endurance is 1200TB written. Power efficiency and the heatsink keep temperatures in check under continuous load.

Punti di forza

  • PCIe 5.0 x4 interface delivers up to 14,700 MB/s sequential read speeds
  • NVMe 2.0 protocol with 2GB LPDDR4X cache enables up to 2,600,000 IOPS random write performance
  • 1,200 TBW endurance rating supports heavy AI workloads and gaming sessions
  • Integrated heatsink maintains thermal control during sustained high-speed operation
  • AES 256-bit encryption with TCG/Opal v2.0 protects sensitive data at rest

Caratteristiche tecniche

BrandSAMSUNG
Series9100 PRO
ModelMZ-VAP2T0CW
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity2TB
Memory ComponentsSamsung V NAND TLC (V8)
InterfacePCI-Express 5.0 x4
ProtocolNVMe 2.0
ControllerIn-House Controller
Cache2GB LPDDR4X
Intelligent TurboWrite 2.0: 482GB
EncryptionClass 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)
Max Sequential ReadUp to 14700 MBps
Max Sequential WriteUp to 13400 MBps
4KB Random ReadUp to 1,850,000 IOPS
4KB Random WriteUp to 2,600,000 IOPS
Terabytes Written (TBW)1200TB
HeatSinkwith HeatSink
Power Consumption (Idle)4.0mW Device Sleep (L1.2)
Power Consumption (Active)8.1W / 7.9W (Read/Write)
Height8.88mm
Width25mm
Depth80.15mm
Weight28g
Peso di spedizione0.16 kg
Dimensioni del pacco142 × 99 × 23 mm

Altre versioni di questo modello

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Stessa famiglia, con memoria, dissipatore o frequenza diversi — confronti prima di decidere.

Domande su questo articolo

Does the drive fit a standard M.2 2280 slot with the heatsink attached?

The M.2 2280 form factor measures 80.15 mm long, 25 mm wide and 8.88 mm high including the integrated heatsink, so it fits any slot that accepts a 2280 module with that height allowance.

Will this SSD work in a PlayStation 5?

The manufacturer lists PlayStation 5 compatibility; the drive meets the console's PCIe 5.0 x4 NVMe requirement and includes the required heatsink.

What capacity is available for sustained writes before the cache folds back to native TLC speed?

Intelligent TurboWrite 2.0 provides up to 482 GB of SLC cache for burst writes, after which the drive writes directly to the V8 TLC NAND.

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