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Rectangular 2.5 inch SSD with silver metal casing and green circuit board visible

SAMSUNG

SAMSUNG MTFDKCB800TFC-1AZ1ZABYYR 7400 MAX 800GB NVMe 4.0 2.5 internal SSD

SKU CH-JZQD-R9QGN MPN MTFDKCB800TFC-1AZ1ZABYYR

800 GB 2.5″ NVMe 4.0 drive with 6500 MB/s read and 1000 MB/s write speeds

  • 800 GB capacity stores large datasets
  • PCIe 4.0 NVMe interface enables 6500 MB/s sequential reads
  • 240000 IOPS random reads accelerate database queries
  • 1000 MB/s sequential writes sustain logging workloads
  • 122000 IOPS random writes handle mixed I/O patterns

7400 MAX 800 GB NVMe 4.0 drive

The Micron 7400 MAX is an 800 GB solid-state drive built for PCI Express NVMe 4.0. It fits a standard 2.5-inch bay and delivers sequential reads up to 6500 MB/s with writes up to 1000 MB/s. Random 4 KB performance reaches 240000 IOPS read and 122000 IOPS write.

Workloads that fit and those that do not

The drive suits read-heavy enterprise workloads such as content delivery, caching and virtualisation where high random-read IOPS matter. It is less suited for sustained heavy-write tasks like continuous video ingest or large database logging where the 1000 MB/s write ceiling becomes a bottleneck. Buyers needing significantly higher write throughput or larger capacities should consider other models.

Capacity headroom and limits

At 800 GB the drive holds operating systems, applications and active project files with room for over-provisioning. Sequential read bandwidth of 6500 MB/s handles large file loads quickly, while the 240000 IOPS random-read figure supports many parallel VMs or containers. Write-intensive workflows will hit the 1000 MB/s sequential and 122000 IOPS random-write limits, so plan capacity and caching accordingly.

Prednosti

  • 800 GB capacity stores large datasets
  • PCIe 4.0 NVMe interface enables 6500 MB/s sequential reads
  • 240000 IOPS random reads accelerate database queries
  • 1000 MB/s sequential writes sustain logging workloads
  • 122000 IOPS random writes handle mixed I/O patterns

Špecifikácie

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