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Samsung 9100 PRO 1TB M.2 2280 internal SSD, bare green circuit board with black controller and NAND chips

SAMSUNG

SAMSUNG 9100 PRO 1TB M.2 2280 PCIe 5.0 x4 NVMe 2.0 internal SSD (MZ-VAP1T0B/AM)

SKU CH-CFYK-JPJV8 MPN MZ-VAP1T0B/AM

1TB PCIe 5.0 x4 NVMe 2.0 drive with Samsung V-NAND TLC (V8) and 1GB LPDDR4X cache delivering up to 14,700 MB/s read and 13,300 MB/s write

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity1TB
  • Memory ComponentsSamsung V NAND TLC (V8)
  • InterfacePCI-Express 5.0 x4

Style Without Heatsink

Options 1TB

  • PCIe 5.0 x4 interface delivers up to 14700 MB/s sequential read speeds
  • NVMe 2.0 protocol enables 1,850,000 IOPS random read for responsive AI workloads
  • Samsung V-NAND TLC V8 with 1GB LPDDR4X cache sustains 13300 MB/s sequential write throughput
  • Intelligent TurboWrite 2.0 provides 242GB buffer for consistent heavy-duty performance
  • 600TB endurance rating and AES 256 encryption protect long-term data integrity

Samsung 9100 PRO 1TB NVMe 2.0 SSD

This Samsung 9100 PRO internal SSD delivers 1TB of storage on an M.2 2280 form factor with a PCIe 5.0 x4 interface and NVMe 2.0 protocol. An in-house controller and Samsung V NAND TLC (V8) memory serve AI computing, gaming, and heavy-duty workstation workloads. A 1GB LPDDR4X cache supports sustained throughput.

Intelligent TurboWrite 2.0 and encryption

Intelligent TurboWrite 2.0 provides a 242GB write buffer that absorbs bursts before folding back to native TLC speeds. Hardware encryption covers Class 0 AES 256, TCG/Opal v2.0, and MS eDrive (IEEE1667) for data-at-rest protection without software overhead.

Heatsink-free design and broad compatibility

The drive ships without a heatsink, relying on innovative power and thermal control to manage temperatures in laptops and desktops alike. An M.2 2280 footprint fits standard slots, while the PCIe 5.0 x4 link scales up to 8TB capacities across the series. Endurance is rated at 600TB written.

Besonderheiten

  • PCIe 5.0 x4 interface delivers up to 14700 MB/s sequential read speeds
  • NVMe 2.0 protocol enables 1,850,000 IOPS random read for responsive AI workloads
  • Samsung V-NAND TLC V8 with 1GB LPDDR4X cache sustains 13300 MB/s sequential write throughput
  • Intelligent TurboWrite 2.0 provides 242GB buffer for consistent heavy-duty performance
  • 600TB endurance rating and AES 256 encryption protect long-term data integrity

Technische Daten

BrandSAMSUNG
Series9100 PRO
ModelMZ-VAP1T0B/AM
Part NumberMZ- VAP1T0B/AM
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity1TB
Memory ComponentsSamsung V NAND TLC (V8)
InterfacePCI-Express 5.0 x4
ProtocolNVMe 2.0
ControllerIn-House Controller
Cache1GB LPDDR4X
Intelligent TurboWrite 2.0: 242GB
EncryptionClass 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)
Max Sequential ReadUp to 14700 MBps
Max Sequential WriteUp to 13300 MBps
4KB Random ReadUp to 1,850,000 IOPS
4KB Random WriteUp to 2,600,000 IOPS
Terabytes Written (TBW)600TB
HeatSinkwithout HeatSink
Power Consumption (Idle)4.0mW Device Sleep (L1.2)
Power Consumption (Active)7.6W / 7.2W (Read/Write)
Height2.38mm
Width22.15mm
Depth80.15mm
Weight9g
Versandgewicht0.09 kg
Paketgröße165 × 102 × 25 mm

Andere Versionen dieses Modells

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Fragen zu diesem Artikel

When will the 1TB 9100 PRO reach its 600TB written endurance limit?

The drive is rated for 600TB total bytes written. At typical consumer workloads of a few terabytes per year, that limit would take many years to reach.

What throttles first during long, heavy transfers on this PCIe 5.0 x4 SSD?

Sustained writes can exceed the 242GB Intelligent TurboWrite 2.0 buffer, after which the controller reduces speed to manage heat and protect the NAND.

How hot and loud does the M.2 2280 drive get when running all day without a heatsink?

The controller includes innovative power and thermal control to limit heat, but the drive ships without a heatsink so temperatures depend on your system airflow.

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