SAMSUNG
SAMSUNG 990 1TB M.2 2280 internal SSD MZ-V9V1T0B/AM
- Internal Solid Stat…
- Consumer
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SAMSUNG
SAMSUNG 990 2TB M.2 2280 internal SSD MZ-V9V2T0B/AM
A 2TB M.2 2280 NVMe SSD delivering up to 7250 MBps read and 6450 MBps write with 800TB endurance
- Device TypeInternal Solid State Drive (SSD)
- Used ForConsumer
- Form FactorM.2 2280
- Capacity2TB
- Memory ComponentsSamsung V NAND
- InterfacePCI-Express 4.0 x4
Capacity
- 1TB
- 2TB
Durchgestrichene Varianten existieren, sind hier aber nicht vorrätig.
- Up to 7250 MB/s sequential read speeds for fast system responsiveness
- Up to 6450 MB/s sequential write speeds for quick large-file transfers
- Up to 1,200,000 IOPS random write performance for responsive multitasking
- 800 TBW endurance rating for long-term reliability
- AES 256 encryption with TCG/Opal v2.0 for hardware-based data protection
Samsung 990 2TB M.2 2280 NVMe SSD
The Samsung 990 2TB M.2 2280 NVMe SSD uses Samsung V NAND and an in-house controller over a PCI-Express 4.0 x4 link. It delivers sequential reads up to 7250 MBps and writes up to 6450 MBps with 4KB random performance of 850000 read and 1200000 write IOPS. The drive is rated for 800TB written and targets consumer workloads.
Build quality and daily use
The single-sided M.2 2280 form factor fits standard motherboard slots without blocking adjacent components. Host Memory Buffer caching reduces component count while maintaining speed. Hardware encryption covers Class 0 AES 256, TCG/Opal v2.0 and MS eDrive IEEE1667 for data-at-rest protection. Active power averages 4.3W read and 3.8W write.
Practical limits of PCI-Express 4.0 x4
The x4 lane width caps peak throughput at the PCI-Express 4.0 ceiling, so heavier queues saturate the bus before the flash. Systems limited to PCI-Express 3.0 will halve the available bandwidth. Idle power drops to 55mW in PS3 APST and 3mW in PS4 L1.2 states. Sustained write temperatures may trigger throttling without adequate motherboard heatsinking.
Besonderheiten
- Up to 7250 MB/s sequential read speeds for fast system responsiveness
- Up to 6450 MB/s sequential write speeds for quick large-file transfers
- Up to 1,200,000 IOPS random write performance for responsive multitasking
- 800 TBW endurance rating for long-term reliability
- AES 256 encryption with TCG/Opal v2.0 for hardware-based data protection
Technische Daten
| Brand | SAMSUNG |
|---|---|
| Series | 990 |
| Model | MZ-V9V2T0B/AM |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 2TB |
| Memory Components | Samsung V NAND |
| Interface | PCI-Express 4.0 x4 |
| Protocol | NVMe 2.0 |
| Controller | In-House Controller |
| Cache | HMB (Host Memory Buffer) |
| Encryption | Class 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667) |
| Max Sequential Read | Up to 7250 MBps |
| Max Sequential Write | Up to 6450 MBps |
| 4KB Random Read | Up to 850,000 IOPS |
| 4KB Random Write | Up to 1,200,000 IOPS |
| Terabytes Written (TBW) | 800TB |
| Power Consumption (Idle) | PS3 APST on / PS4 L1.2: Typical 55mW / Typical 3mW |
| Power Consumption (Active) | Read/Write, Average: 4.3W / 3.8W |
| Height | 2.38mm |
| Width | 22.15mm |
| Depth | 80.15mm |
| Weight | 6g |
| Versandgewicht | 0.09 kg |
| Paketgröße | 168 × 99 × 23 mm |
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Fragen zu diesem Artikel
What does the PCI-Express 4.0 x4 interface cap the sequential read speed at?
The PCI-Express 4.0 x4 interface supports up to 7250 MBps sequential read and 6450 MBps sequential write.
What physical slot and form factor does the M.2 2280 drive require?
It fits a standard M.2 2280 slot measuring 22 mm wide by 80 mm long on the motherboard.
How is the drive installed and which step is often missed?
Insert the drive at an angle into the M.2 slot, press it flat, and secure it with the motherboard screw; many forget to fasten that screw.
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