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Rectangular 2.5 inch SATA SSD with black metal casing and label

SAMSUNG

SAMSUNG 860 EVO 4TB 2.5" SATA internal SSD MZ-76E4T0B/AM

SKU CH-3V0X-T3FDH MPN MZ-76E4T0B/AM

A 2.5" SATA internal SSD with 4TB capacity, V-NAND 3-bit MLC memory, sequential speeds up to 550 MBps read and 520 MBps write, AES 256-bit encryption, and 2,400 TBW endurance

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form Factor2.5"
  • Capacity4TB
  • Memory ComponentsV-NAND 3-bit MLC
  • InterfaceSATA III
  • 4TB capacity stores large media libraries and game collections
  • Sequential read up to 550 MBps and write up to 520 MBps for fast file transfers
  • V-NAND 3-bit MLC with 4GB DDR4 cache delivers sustained performance
  • AES 256-bit hardware encryption protects data without software overhead
  • 2,400 TBW endurance and 1,500,000 hour MTBF for long-term reliability

4TB SATA SSD for consumer PCs

The Samsung 860 EVO MZ-76E4T0B/AM is a 2.5-inch internal solid state drive with a 4TB capacity. It uses a SATA III interface and V-NAND 3-bit MLC memory managed by an MJX controller. A 4GB Low Power DDR4 SDRAM cache supports sustained throughput for everyday workloads and large media libraries.

Thermals noise and power draw

Average active power consumption is 3.0W with a maximum burst of 4.0W. The drive operates between 0°C and 70°C without moving parts, so it produces no audible noise. Solid-state construction provides shock resistance rated at 1,500G for 0.5 ms, protecting data during transport or accidental drops.

Magician software and encryption

Samsung Magician software enables firmware updates, health monitoring via S.M.A.R.T., and secure erase functions. Hardware-based AES 256-bit full disk encryption complies with TCG/Opal V2.0 and IEEE 1667 standards. Auto garbage collection and TRIM support maintain write performance across the 2,400 TBW endurance rating.

Points forts

  • 4TB capacity stores large media libraries and game collections
  • Sequential read up to 550 MBps and write up to 520 MBps for fast file transfers
  • V-NAND 3-bit MLC with 4GB DDR4 cache delivers sustained performance
  • AES 256-bit hardware encryption protects data without software overhead
  • 2,400 TBW endurance and 1,500,000 hour MTBF for long-term reliability

Caractéristiques

BrandSAMSUNG
Series860 EVO Series
ModelMZ-76E4T0B/AM
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form Factor2.5"
Capacity4TB
Memory ComponentsV-NAND 3-bit MLC
InterfaceSATA III
ControllerMJX
CacheSamsung 4GB Low Power DDR4 SDRAM
Max Sequential ReadUp to 550 MBps
Max Sequential WriteUp to 520 MBps
4KB Random ReadRandom (QD1): Up to 10,000 IOPS
Random (QD32): Up to 98,000 IOPS
4KB Random WriteRandom (QD1): 42,000 IOPS
Random (QD32): 90,000 IOPS
MTBF1,500,000 hours
Features2,400 TBW
Trim Support: Yes
AES Encryption: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
Security: AES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive (IEEE1667)
S.M.A.R.T. Support: Yes
GC (Garbage Collection): Auto Garbage Collection Algorithm
WWN Support: World Wide Name supported
Device Sleep Mode Support: Yes
Management SW: Magician Software for SSD management
Power Consumption (Active)Average: 3.0W
Maximum: 4.0W (Burst mode)
Operating Temperature0°C ~ +70°C
Max Shock Resistance1,500G & 0.5 ms (Half sine)
Height7.00mm
Width70.00mm
Depth100.00mm
Weight100.00g
Poids d’expédition0.10 kg
Dimensions du colis168 × 94 × 23 mm

Questions sur cet article

How do I install the 2.5" SATA 860 EVO 4TB in a desktop, and what step is often missed?

Connect the drive to a SATA data cable and a SATA power connector, then initialise it in the OS disk management tool; the step often missed is creating a partition and formatting the volume before use.

What maintenance or replacement will the 860 EVO 4TB need during its lifespan?

The drive has no moving parts and requires no scheduled maintenance; its 2,400 TBW endurance rating and 1,500,000-hour MTBF indicate when replacement may be needed after heavy write workloads.

What limit appears first on the 860 EVO 4TB during sustained heavy writes?

The sequential write speed is rated up to 520 MBps, and the 4KB random write at QD32 reaches 90,000 IOPS; sustained workloads will hit these controller and NAND throughput ceilings first.

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