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Samsung 9100 PRO 8TB M.2 2280 SSD with silver heatsink

SAMSUNG

SAMSUNG 9100 PRO 8TB M.2 2280 PCIe 5.0 x4 internal SSD with HeatSink

SKU CH-3574-H8EDJ

High-capacity 8TB M.2 2280 PCIe 5.0 x4 NVMe drive with integrated heatsink delivers up to 14800 MBps read and 13400 MBps write speeds for demanding workloads

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity8TB
  • Memory ComponentsSamsung V NAND TLC (V8)
  • InterfacePCI-Express 5.0 x4
  • Massive 8TB capacity stores huge projects and game libraries
  • PCIe 5.0 x4 interface delivers up to 14800 MBps sequential read speed
  • 8GB LPDDR4X cache and Intelligent TurboWrite 2.0 sustain up to 13400 MBps sequential write
  • 4800TB endurance rating supports heavy workloads for years
  • Integrated heatsink keeps the drive cool under sustained loads

9100 PRO 8TB PCIe 5.0 NVMe SSD

The Samsung 9100 PRO is an M.2 2280 internal solid-state drive built for consumer workloads that demand high throughput. It combines an in-house controller with Samsung V-NAND TLC (V8) memory and an 8GB LPDDR4X cache. The drive ships with an integrated heatsink to manage thermals under sustained load.

PCIe 5.0 x4 interface with NVMe 2.0 protocol

This drive connects through a PCI-Express 5.0 x4 link and speaks NVMe 2.0. The interface is the single specification that decides compatibility; the host must provide a PCIe 5.0 x4 M.2 slot to reach the rated 14800 MBps sequential read and 13400 MBps sequential write speeds.

8TB capacity with 4800 TBW endurance

Eight terabytes of usable space handles large media libraries, game collections and professional project files with room to spare. The 4800 TBW rating and 1928GB Intelligent TurboWrite 2.0 buffer support heavy write workloads, while Class 0 AES 256 encryption and TCG Opal 2.0 protect data at rest.

Points forts

  • Massive 8TB capacity stores huge projects and game libraries
  • PCIe 5.0 x4 interface delivers up to 14800 MBps sequential read speed
  • 8GB LPDDR4X cache and Intelligent TurboWrite 2.0 sustain up to 13400 MBps sequential write
  • 4800TB endurance rating supports heavy workloads for years
  • Integrated heatsink keeps the drive cool under sustained loads

Caractéristiques

BrandSAMSUNG
Series9100 PRO
ModelMZ-VAP8T0CW
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity8TB
Memory ComponentsSamsung V NAND TLC (V8)
InterfacePCI-Express 5.0 x4
ProtocolNVMe 2.0
ControllerIn-House Controller
Cache8GB LPDDR4X
Intelligent TurboWrite 2.0: 1928GB
EncryptionClass 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)
Max Sequential ReadUp to 14800 MBps
Max Sequential WriteUp to 13400 MBps
4KB Random ReadUp to 2,200,000 IOPS
4KB Random WriteUp to 2,600,000 IOPS
Terabytes Written (TBW)4800TB
HeatSinkwith HeatSink
Power Consumption (Idle)9.3mW Device Sleep (L1.2)
Power Consumption (Active)10.5W / 8.8W (Read/Write)
Height11.25mm
Width25mm
Depth80.15mm
Weight35g

Questions sur cet article

Does the drive fit in a standard M.2 2280 slot with the heatsink already attached?

The drive measures 11.25 mm in height including the integrated heatsink, so it fits motherboards that allow that thickness; check your board's clearance if space is tight.

Can my motherboard use the full 14800 MBps read speed?

You need a PCIe 5.0 x4 M.2 slot and NVMe 2.0 support to reach the quoted sequential figures; a PCIe 4.0 slot will limit the drive to that generation's bandwidth.

Is the 8 GB LPDDR4X cache enough for sustained heavy writes?

The 1928 GB Intelligent TurboWrite 2.0 buffer handles burst workloads before the controller writes directly to the TLC NAND, keeping performance consistent during large transfers.

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