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Samsung 990 EVO Plus 4TB M.2 2280 internal SSD with green circuit board and black controller

SAMSUNG

SAMSUNG 990 EVO Plus 4TB M.2 2280 Internal SSD MZ-V9S4T0B/AM

SKU CH-010A-KE2F5 MPN MZ-V9S4T0B/AM

4TB NVMe internal SSD with PCIe 4.0 x4 and PCIe 5.0 x2 support, up to 7250 MB/s read and 6300 MB/s write, 2400 TBW endurance, and 256-bit AES encryption

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity4TB
  • InterfacePCI-Express 4.0 x4 / PCI-Express 5.0 x2
  • ProtocolNVMe 2.0

Style Faster

Options 4TB

  • Sequential reads up to 7250 MB/s for faster large-file transfers
  • Sequential writes up to 6300 MB/s accelerate content creation workloads
  • Random reads up to 1050000 IOPS boost application responsiveness
  • Random writes up to 1400000 IOPS improve multitasking performance
  • 2400 TBW endurance rating supports heavy write workloads

4TB M.2 2280 NVMe 2.0 SSD

The Samsung 990 EVO Plus MZ-V9S4T0B/AM is a 4TB internal solid-state drive built for consumer PCs and laptops. It uses the M.2 2280 form factor and connects through a PCIe interface. The drive targets users who need high-capacity storage for large files and demanding applications.

PCIe 4.0 x4 and 5.0 x2 dual-mode interface

The SSD operates on PCI-Express 4.0 x4 or PCI-Express 5.0 x2 lanes with the NVMe 2.0 protocol. Sequential reads reach up to 7250 MBps and writes up to 6300 MBps. Random 4KB performance hits 1,050,000 IOPS read and 1,400,000 IOPS write. The drive is rated for 2400 TBW and draws 5.5W active read or 4.8W active write without a DRAM cache.

Nickel-coated controller and 256-bit AES encryption

A nickel-coated controller helps manage thermals and power efficiency during sustained workloads. Hardware encryption supports Class 0 AES 256-bit, TCG/Opal v2.0 and MS eDrive IEEE1667 standards. Samsung Magician software keeps firmware current and monitors drive health. The single-sided M.2 2280 layout fits standard slots in desktops and thin laptops.

Points forts

  • Sequential reads up to 7250 MB/s for faster large-file transfers
  • Sequential writes up to 6300 MB/s accelerate content creation workloads
  • Random reads up to 1050000 IOPS boost application responsiveness
  • Random writes up to 1400000 IOPS improve multitasking performance
  • 2400 TBW endurance rating supports heavy write workloads

Caractéristiques

BrandSAMSUNG
Series990 EVO Plus
ModelMZ-V9S4T0B/AM
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity4TB
InterfacePCI-Express 4.0 x4 / PCI-Express 5.0 x2
ProtocolNVMe 2.0
CacheNo DRAM (HMB)
EncryptionClass 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667)
Max Sequential ReadUp to 7250 MBps
Max Sequential WriteUp to 6300 MBps
4KB Random ReadUp to 1,050,000 IOPS
4KB Random WriteUp to 1,400,000 IOPS
Terabytes Written (TBW)2400TB
Power Consumption (Active)5.5W / 4.8W (Read / Write)
Poids d’expédition0.09 kg
Dimensions du colis165 × 99 × 22 mm

Autres versions de ce modèle

4 de plus dans cette gamme

Même famille, mémoire, ventirad ou fréquence différents — comparez avant de vous décider.

Questions sur cet article

Should I choose the 4TB version or a smaller capacity?

The 4TB model delivers up to 7,250 MB/s read and 6,300 MB/s write with 2,400 TBW endurance, while smaller capacities have lower TBW ratings and reduced write performance.

What does the 7,250 MB/s sequential read figure mean when the drive is installed in my system?

That peak read speed is reached on PCIe 4.0 x4 or 5.0 x2 links with sustained large-file transfers; typical OS and game loads run at lower queue depths and show smaller real-world gains.

How does the PCIe 4.0 x4 and 5.0 x2 dual-mode interface affect the maximum throughput I can get?

The controller negotiates the highest common link — four lanes of Gen 4 or two lanes of Gen 5 — so sequential reads cap at 7,250 MB/s on either standard, while writes top out at 6,300 MB/s.

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