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A thin green circuit board with gold edge connectors and black memory chips, labelled Samsung 860 EVO 1TB

SAMSUNG

SAMSUNG 860 EVO M.2 2280 1TB internal SSD MZ-N6E250BW

SKU CH-46F0-ZMM6N MPN MZ-N6E250BW

A 1 TB M.2 2280 SATA drive with up to 550 MB/s reads and 520 MB/s writes

  • Form FactorM.2 2280
  • Capacity1TB
  • Memory ComponentsTLC
  • Max Sequential ReadUp to 550 MBps
  • Max Sequential WriteUp to 520 MBps
  • Height2.38mm

Options 1TB

  • Up to 550 MB/s sequential read for fast system boot
  • Up to 520 MB/s sequential write for quick file saves
  • 97,000 IOPS random read at QD32 for responsive multitasking
  • 1,500,000 hours MTBF for long-term reliability
  • 50 mW idle power consumption for energy efficiency

1TB SATA M.2 drive for everyday PCs

The Samsung 860 EVO M.2 2280 offers one terabyte of storage over a SATA III interface. It uses 3D NAND TLC memory and an MJX controller with a 512MB LPDDR4 cache. The drive fits standard M.2 slots that support SATA signalling. It is built for consumer workloads such as operating systems, applications and media libraries.

Thin 2.38mm profile suits tight spaces

At 2.38mm thick the module sits flush in ultra-thin laptops and small-form-factor desktops. The M.2 2280 keying requires a slot wired for SATA, not PCIe, so check the motherboard manual before installation. No heatsink or extra mounting hardware is included. The 80-gram weight adds negligible mass to portable systems.

SATA III caps throughput at 550 MB/s

Sequential reads reach up to 550 MBps and writes up to 520 MBps, the practical ceiling of the SATA III bus. Random 4KB performance peaks at 97,000 IOPS read and 88,000 IOPS write at queue depth 32. The drive draws 2.2 W active and 50 mW idle, operating from 0°C to 70°C. MTBF is rated at 1,500,000 hours.

Punti di forza

  • Up to 550 MB/s sequential read for fast system boot
  • Up to 520 MB/s sequential write for quick file saves
  • 97,000 IOPS random read at QD32 for responsive multitasking
  • 1,500,000 hours MTBF for long-term reliability
  • 50 mW idle power consumption for energy efficiency

Caratteristiche tecniche

BrandSAMSUNG
Series860 EVO Series
Form FactorM.2 2280
Capacity1TB
Memory ComponentsTLC
Max Sequential ReadUp to 550 MBps
Max Sequential WriteUp to 520 MBps
Height2.38mm

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