Aceitamos criptomoeda — para que as moedas que detém possam comprar material informático real.Pague em cripto, gaste-a em material informático real. Envio seguro gratuito para todo o mundo acima de 399 $. Caixas neutras, sem marca, expedidas a partir da Alemanha.Envio seguro gratuito acima de 399 $. A sua taxa fica bloqueada durante 30 minutos assim que abre a finalização da compra.Taxa bloqueada 30 minutos. Cada artigo é selado, o seu número de série é verificado, e está coberto por uma garantia de 24 meses.Selado, garantido 24 meses.

Artigos guardados Iniciar sessão

SAMSUNG

SAMSUNG 860 EVO M.2 2280 1TB internal SSD MZ-N6E250BW

SKU CH-46F0-ZMM6N MPN MZ-N6E250BW

A 1 TB M.2 2280 SATA drive with up to 550 MB/s reads and 520 MB/s writes

  • Form FactorM.2 2280
  • Capacity1TB
  • Memory ComponentsTLC
  • Max Sequential ReadUp to 550 MBps
  • Max Sequential WriteUp to 520 MBps
  • Height2.38mm

Options 1TB

  • Up to 550 MB/s sequential read for fast system boot
  • Up to 520 MB/s sequential write for quick file saves
  • 97,000 IOPS random read at QD32 for responsive multitasking
  • 1,500,000 hours MTBF for long-term reliability
  • 50 mW idle power consumption for energy efficiency

1TB SATA M.2 drive for everyday PCs

The Samsung 860 EVO M.2 2280 offers one terabyte of storage over a SATA III interface. It uses 3D NAND TLC memory and an MJX controller with a 512MB LPDDR4 cache. The drive fits standard M.2 slots that support SATA signalling. It is built for consumer workloads such as operating systems, applications and media libraries.

Thin 2.38mm profile suits tight spaces

At 2.38mm thick the module sits flush in ultra-thin laptops and small-form-factor desktops. The M.2 2280 keying requires a slot wired for SATA, not PCIe, so check the motherboard manual before installation. No heatsink or extra mounting hardware is included. The 80-gram weight adds negligible mass to portable systems.

SATA III caps throughput at 550 MB/s

Sequential reads reach up to 550 MBps and writes up to 520 MBps, the practical ceiling of the SATA III bus. Random 4KB performance peaks at 97,000 IOPS read and 88,000 IOPS write at queue depth 32. The drive draws 2.2 W active and 50 mW idle, operating from 0°C to 70°C. MTBF is rated at 1,500,000 hours.

Pontos fortes

  • Up to 550 MB/s sequential read for fast system boot
  • Up to 520 MB/s sequential write for quick file saves
  • 97,000 IOPS random read at QD32 for responsive multitasking
  • 1,500,000 hours MTBF for long-term reliability
  • 50 mW idle power consumption for energy efficiency

Especificações

BrandSAMSUNG
Series860 EVO Series
Form FactorM.2 2280
Capacity1TB
Memory ComponentsTLC
Max Sequential ReadUp to 550 MBps
Max Sequential WriteUp to 520 MBps
Height2.38mm

Outras versões deste modelo

Mais 2 nesta gama

Mesma família, memória, ventoinha ou frequência diferentes — compare antes de decidir.

Também nesta secção

Os clientes também compararam

Mesma prateleira, mesma finalização da compra — oito moedas e uma taxa bloqueada durante 30 minutos.