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Green rectangular circuit board with black memory chips and gold edge contacts

OWC

OWC 8GB DDR4 3200MHz CL22 1.2V 260pin SODIMM memory upgrade

SKU CH-NFGS-PR931

8GB DDR4 3200MHz CL22 SODIMM upgrades HP EliteBook 630 G9, 640 G9, 640 G10, 645 G10 and 650 G10

  • Capacity8GB
  • Type260-Pin DDR4 Non-ECC SODIMM
  • SpeedDDR4 3200 (PC4 25600)
  • CAS LatencyCL22
  • Voltage1.2V
  • ECCNo
  • 8GB DDR4 3200MHz boosts multitasking speed for EliteBook 630 G9 640 G10 640 G9 645 G10 650 G10
  • CL22 1.2V low-latency operation keeps responsiveness snappy under load
  • JEDEC 100% compliant ROHS module ensures warranty-safe upgrade path
  • 260-pin SODIMM form factor fits the listed laptops without adapters
  • Single-rank 1Rx8 unbuffered design simplifies DIY installation for immediate gains

Targeted HP EliteBook upgrade

This 8GB DDR4 SODIMM is built for the HP EliteBook 630 G9, 640 G9, 640 G10, 645 G10 and 650 G10. It suits professionals who need a straightforward capacity increase for daily multitasking. The module follows JEDEC standard specifications and is ROHS compliant. Installation is a simple DIY step for most users.

Low voltage and no heat spreader

The stick runs at 1.2V without a heat spreader, keeping power draw minimal inside thin-and-light chassis. Unbuffered non-ECC operation means no extra controller overhead or noise. CL22 latency at 3200MHz fits the platform's standard timing profile. Thermal output stays within the laptop's existing cooling design.

Steady throughput for long sessions

Sustained workloads such as large document batches or browser-heavy research benefit from the consistent 3200MHz data rate. Rank 1Rx8 organisation helps maintain stable bandwidth over extended use. JEDEC compliance ensures the module behaves predictably under continuous load. The memory retains its rated speed without throttling in the supported EliteBook models.

特長

  • 8GB DDR4 3200MHz boosts multitasking speed for EliteBook 630 G9 640 G10 640 G9 645 G10 650 G10
  • CL22 1.2V low-latency operation keeps responsiveness snappy under load
  • JEDEC 100% compliant ROHS module ensures warranty-safe upgrade path
  • 260-pin SODIMM form factor fits the listed laptops without adapters
  • Single-rank 1Rx8 unbuffered design simplifies DIY installation for immediate gains

仕様

BrandOWC
Part Number3S2D41R808GB
Capacity8GB
Type260-Pin DDR4 Non-ECC SODIMM
SpeedDDR4 3200 (PC4 25600)
CAS LatencyCL22
Voltage1.2V
ECCNo
Buffered/RegisteredUnbuffered
Rank1Rx8
Heat SpreaderNo
Compatible SystemHP EliteBook 630 G9
HP EliteBook 640 G10
HP EliteBook 640 G9
HP EliteBook 645 G10
HP EliteBook 650 G10

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同シリーズにさらに 5点

同じファミリーで、メモリ・クーラー・クロックが異なります — 購入前に比較してください。

この商品に関する質問

How do I install the 260-pin DDR4 SODIMM in my HP EliteBook 640 G9, and what step do people often miss?

Power off, unplug, and remove the battery if accessible. Insert the module at a 30° angle until the gold contacts are almost hidden, then press down firmly until both side clips click. The step most people miss is pressing evenly on both ends so the clips engage together.

What maintenance or replacement will this 8 GB DDR4 3200 MHz CL22 module need later?

No scheduled maintenance is required. The module has no heat spreader and no moving parts. Replacement is only needed if a memory test reports errors or if you later expand to a higher total capacity.

What limit appears first when this CL22 1.2 V SODIMM runs sustained workloads?

The CAS latency of 22 cycles at 3200 MT/s sets the baseline response time. Under sustained load the memory controller’s thermal throttle point or the platform’s maximum supported rank count will limit throughput before the module itself overheats.

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