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SAMSUNG

SAMSUNG M378A2K43CB1-CTD 16GB DDR4 2666 UDIMM desktop RAM

SKU CH-QVNK-XTVJV MPN M378A2K43CB1-CTD

16 GB DDR4 desktop module running at 2666 MT/s with CL19 timing and 1.2 V operation

  • 16 GB capacity for demanding workloads
  • 2666 MT/s DDR4 speed for responsive performance
  • CL19 latency for efficient data access
  • 2Rx8 dual-rank organisation for higher density
  • 2 V operation for lower power draw

16 GB DDR4 2666 UDIMM Module

This 16 GB DDR4 module runs at 2666 MT/s with a CL19 latency. It fits standard 288-pin desktop DIMM slots and operates at 1.2 V. The 2Rx8 organisation suits mainstream workloads and general multitasking.

Thermals Noise and Power Draw

DDR4 UDIMMs draw very little power and produce minimal heat at 1.2 V. No active cooling is required and the module runs silently inside the case. Typical system airflow is sufficient for stable operation.

2Rx8 Rank Organisation

The dual-rank 2Rx8 layout can improve memory controller efficiency on platforms that benefit from rank interleaving. Buyers who need single-rank modules for specific motherboard topologies should choose a different part.

特長

  • 16 GB capacity for demanding workloads
  • 2666 MT/s DDR4 speed for responsive performance
  • CL19 latency for efficient data access
  • 2Rx8 dual-rank organisation for higher density
  • 2 V operation for lower power draw

仕様

この商品の仕様はまだ公開されていません。

この商品に関する質問

How do I install the 288-pin DDR4 UDIMM and what step is often missed?

Align the notch on the module with the slot key, press down firmly until both side clips click shut, and verify the system detects the full 16GB capacity in BIOS.

What maintenance or replacement will this 16GB DDR4 module need over time?

No scheduled maintenance is required; keep the contacts clean and ensure adequate case airflow so the 1.2V DRAM stays within thermal limits.

What limit appears first when the 2Rx8 CL19 PC4-21300 memory runs under sustained load?

The CAS latency of 19 cycles at 2666 MT/s sets the response-time floor before bandwidth saturation becomes a factor.

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