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HUADISK

HUADISK HYV256X3(XT) 256GB internal SSD with heatsink

SKU CH-PG9R-AEE10

256GB M.2 2280 NVMe SSD with graphene heatsink, 2300 MBps read, 1100 MBps write, 200 TBW endurance

  • Max Sequential ReadUp to 2300 MBps
  • Max Sequential WriteUp to 1100 MBps
  • 4KB Random ReadUp to 200,000 IOPS
  • 4KB Random WriteUp to 230,000 IOPS
  • Terabytes Written (TBW)200TB
  • MTBF1,000,000 hours

Capacity 256GB

  • Sequential read up to 2300 MBps cuts boot and load times
  • Sequential write up to 1100 MBps accelerates file saves and installs
  • Random write up to 230,000 IOPS keeps multi-tasking responsive
  • Graphene heatsink drops drive temperature by up to 10 °C under heavy loads
  • 200 TBW and 1,000,000 hour MTBF back long-term reliability

256 GB M.2 2280 NVMe SSD

The HUADISK HYV256X3(XT) is a 256 GB internal solid-state drive built on 3D NAND flash and the NVMe 1.3 protocol. It fits the M.2 2280 slot and connects through a PCI-Express 3.0 x4 interface, making it a direct upgrade for compatible desktops and laptops.

PCI-Express 3.0 x4 interface

The single specification that determines fit is the PCI-Express 3.0 x4 interface combined with the M.2 2280 form factor. Only systems that provide an M-keyed M.2 slot wired for four PCIe 3.0 lanes can use this drive at its rated speeds.

Graphene heatsink under sustained load

A graphene cooling layer reduces internal temperature by up to 10 °C during heavy workloads such as large transfers or 4K editing. Active power draw is 3.23 W and idle draw is 1.19 W, while the drive is rated for 200 TBW and 1,000,000 hours MTBF within an operating range of 0 °C to 70 °C.

주요 특징

  • Sequential read up to 2300 MBps cuts boot and load times
  • Sequential write up to 1100 MBps accelerates file saves and installs
  • Random write up to 230,000 IOPS keeps multi-tasking responsive
  • Graphene heatsink drops drive temperature by up to 10 °C under heavy loads
  • 200 TBW and 1,000,000 hour MTBF back long-term reliability

사양

Max Sequential ReadUp to 2300 MBps
Max Sequential WriteUp to 1100 MBps
4KB Random ReadUp to 200,000 IOPS
4KB Random WriteUp to 230,000 IOPS
Terabytes Written (TBW)200TB
MTBF1,000,000 hours
Form FactorM.2 2280
Capacity256GB
InterfacePCI-Express 3.0 x4
Memory Components3D NAND
ProtocolNVMe 1.3
Power Consumption (Active)3.23W
Power Consumption (Idle)1.19W
Operating Temperature0°C ~ +70°C
Storage Temperature-20°C ~ +75°C
Operating Humidity5-95%
BrandHUADISK
SeriesHYVXXXX3(XT)
ModelHYV256X3(XT)
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Height22mm
Width80mm
Depth2.1mm
Weight40g

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이 상품에 대한 질문

How fast will the 2300 MBps sequential read and 1100 MBps sequential write feel when the drive is installed in my PC?

The rated 2300 MBps read and 1100 MBps write cut Windows start-up and large-game level loads to a fraction of what a mechanical drive delivers, while the 200,000/230,000 IOPS random figures keep background updates responsive.

What does the PCI-Express 3.0 x4 interface actually limit in everyday use?

PCI-Express 3.0 x4 caps the drive at the quoted 2300 MBps read and 1100 MBps write ceiling, so sustained copies and game streaming will not exceed those speeds even if the controller could go faster.

Will the 22 mm height and 80 mm width with the attached heatsink fit my laptop M.2 slot?

The drive measures 80 mm long, 22 mm wide and 2.1 mm thick without the heatsink; the graphene layer adds a few millimetres, so check your laptop clearance before fitting.

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