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SAMSUNG

SAMSUNG 16GB DDR3 1600MHz 204-Pin SO-DIMM Kit (2x8GB) 1.35V CL11

SKU CH-G90X-T2CXZ

16 GB laptop memory kit with two 8 GB DDR3 SO-DIMMs at 1600 MHz, CL11 and 1.35 V

  • Capacity16GB (2 x 8GB)
  • Type204-Pin DDR3 SO-DIMM
  • SpeedDDR3 1600 (PC3 12800)
  • 16 GB kit doubles capacity for multitasking
  • 1600 MHz DDR3 speed handles everyday workloads
  • CL11 latency keeps response times low
  • 35 V operation reduces power draw
  • 204-pin SO-DIMM fits compatible laptop slots

Capacity and fit

This is a 16GB kit of two 8GB DDR3 SO-DIMM modules built to the 204-pin standard. It targets laptops and small-form-factor systems that require low-voltage DDR3 memory running at 1600MHz.

Thermals noise and power

Operating at 1.35V reduces power draw and heat output compared with standard-voltage DDR3. The unbuffered non-ECC design adds no active cooling requirement so the modules run silently inside the chassis.

Upgrade scope

The kit replaces a single 8GB stick or a pair of lower-capacity modules to reach the 16GB total. The jump is worthwhile when the platform supports DDR3 1600 at CL11 and the workload benefits from the extra capacity.

주요 특징

  • 16 GB kit doubles capacity for multitasking
  • 1600 MHz DDR3 speed handles everyday workloads
  • CL11 latency keeps response times low
  • 35 V operation reduces power draw
  • 204-pin SO-DIMM fits compatible laptop slots

사양

Capacity16GB (2 x 8GB)
Type204-Pin DDR3 SO-DIMM
SpeedDDR3 1600 (PC3 12800)

이 상품에 대한 질문

How do I install the 204-pin SO-DIMM modules and which step is often missed?

Power off the laptop and remove the battery if possible. Insert each module at an angle into the slot, then press down firmly until both side clips click. The step people miss is pressing hard enough to engage both clips fully.

What maintenance or replacement will this 16GB DDR3 kit need later?

No routine maintenance is required. Keep the contacts clean and ensure the laptop's cooling vents stay clear. Replacement is only needed if a module fails or if you upgrade to a system that requires a different memory generation.

What limit appears first during sustained heavy workloads with this CL11 1.35V memory?

The CAS latency of 11 cycles at 1600 MHz sets the response speed. Under continuous load the memory controller and system thermals typically become the bottleneck before the modules themselves reach any electrical limit.

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