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Samsung 860 EVO M.2 2280 1TB SATA internal SSD, black circuit board with gold edge connector and silver label

SAMSUNG

SAMSUNG 860 EVO M.2 2280 1TB SATA internal SSD

SKU CH-62XV-8B0H3

M.2 2280 SATA internal SSD with 1TB capacity, V-NAND 3-bit MLC memory, up to 550 MBps sequential read and 520 MBps sequential write, 600TB TBW endurance and 1.5 million hour MTBF

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity1TB
  • Memory ComponentsV-NAND 3-bit MLC
  • InterfaceSATA III
  • SATA III sequential reads up to 550 MBps for fast boot and load times
  • 600TB written endurance rating protects data through heavy daily workloads
  • 1GB DDR4 cache and MJX controller sustain 97,000 IOPS random read performance
  • M.2 2280 form factor fits thin laptops and compact desktops without cables
  • 1,500,000 hour MTBF and 1,500G shock resistance keep the drive reliable on the move

1TB SATA M.2 drive for everyday PCs

The Samsung 860 EVO M.2 2280 1TB uses a SATA III interface and V-NAND 3-bit MLC memory to deliver 1TB of storage for consumer laptops and desktops. A Samsung MJX controller and 1GB Low Power DDR4 cache manage data flow. Sequential reads reach up to 550 MBps and writes up to 520 MBps.

Sustained workloads and endurance

Random read performance scales from 10,000 IOPS at QD1 to 97,000 IOPS at QD32, while random write spans 42,000 IOPS at QD1 to 88,000 IOPS at QD32. The drive is rated for 600TB written and a 1,500,000-hour MTBF. Active power averages 3.0W with a 4.5W burst ceiling, and the operating range spans 0°C to 70°C.

M.2 2280 build and daily fit

The single-sided M.2 2280 module measures 22.00mm wide, 80.00mm long and 2.30mm high, fitting standard M.2 slots keyed for SATA. It withstands 1,500G shock at 0.5 ms half-sine, so it handles normal transport and laptop vibration without issue. No heatsink or extra mounting hardware is required beyond the motherboard screw.

주요 특징

  • SATA III sequential reads up to 550 MBps for fast boot and load times
  • 600TB written endurance rating protects data through heavy daily workloads
  • 1GB DDR4 cache and MJX controller sustain 97,000 IOPS random read performance
  • M.2 2280 form factor fits thin laptops and compact desktops without cables
  • 1,500,000 hour MTBF and 1,500G shock resistance keep the drive reliable on the move

사양

BrandSAMSUNG
Series860 EVO Series
ModelMZ-N6E1T0BW
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity1TB
Memory ComponentsV-NAND 3-bit MLC
InterfaceSATA III
ControllerSamsung MJX
CacheSamsung 1GB Low Power DDR4 SDRAM
Max Sequential ReadUp to 550 MBps
Max Sequential WriteUp to 520 MBps
4KB Random ReadRandom (QD1): Up to 10,000 IOPS
Random (QD32): Up to 97,000 IOPS
4KB Random WriteRandom (QD1): Up to 42,000 IOPS
Random (QD32): Up to 88,000 IOPS
Terabytes Written (TBW)600TB
MTBF1,500,000 hours
Power Consumption (Active)Average: 3.0W
Maximum: 4.5W (Burst mode)
Operating Temperature0°C ~ +70°C
Max Shock Resistance1,500G & 0.5 ms (Half sine)
Height2.30mm
Width22.00mm
Depth80.00mm

이 상품에 대한 질문

How much heat and power does the 860 EVO M.2 draw when running continuously?

Average active power is 3.0W with a 4.5W burst maximum, and the operating temperature range is 0°C to 70°C.

What slot and interface must my motherboard provide for this M.2 2280 drive?

It requires an M.2 2280 slot that supports the SATA III interface.

Will the SATA III interface limit performance on an older platform?

Sequential speeds reach up to 550 MBps read and 520 MBps write, matching the SATA III ceiling.

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