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Samsung 970 EVO M.2 2280 internal SSD, black circuit board with gold edge connector and silver controller, green label with white text

SAMSUNG

SAMSUNG 970 EVO MZ-V7E500BW 500GB internal SSD

SKU CH-SP3G-110KD MPN MZ-V7E500BW

500 GB M.2 2280 NVMe SSD with 3400 MB/s read, 2300 MB/s write, 512 MB LPDDR4 cache and 300 TBW endurance

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity500GB
  • Memory ComponentsV-NAND 3-bit MLC
  • InterfacePCIe Gen3. X4, NVMe 1.3

Options 500GB

  • Breakthrough sequential speeds up to 3400 MB/s read and 2300 MB/s write
  • High random IOPS with 370,000 read and 450,000 write at QD32 for responsive multitasking
  • V-NAND 3-bit MLC with 512MB LPDDR4 cache delivers sustained performance and endurance
  • Dynamic thermal guard maintains optimal temperatures preventing throttling under heavy loads
  • 300 TBW and 1,500,000 hours MTBF ensure long-term reliability for demanding workloads

Samsung 970 EVO 500GB NVMe SSD

The Samsung 970 EVO MZ-V7E500BW is a 500GB internal solid state drive built for consumer workloads. It uses a PCIe Gen3 x4 interface with NVMe 1.3 protocol and Samsung V-NAND 3-bit MLC memory. A Samsung Phoenix controller and 512MB LPDDR4 DRAM cache manage data flow for enthusiasts, high-end gamers and 4K content designers.

Sustained write behaviour and endurance

Sequential write speed reaches up to 2300 MBps while random write hits 450,000 IOPS at QD32 and 50,000 IOPS at QD1. The drive is rated for 300 TBW total bytes written and an MTBF of 1,500,000 hours. Samsung Magician software handles firmware updates and performance optimisation to keep speeds consistent during long sessions.

Thermals power and noise

Dynamic Thermal Guard monitors temperature and throttles automatically to maintain optimal operating range between 0°C and 70°C. Idle power draw is a maximum of 30 mW while average active consumption sits at 5.7W with a 10W burst ceiling. The M.2 2280 form factor has no moving parts so operation is completely silent.

주요 특징

  • Breakthrough sequential speeds up to 3400 MB/s read and 2300 MB/s write
  • High random IOPS with 370,000 read and 450,000 write at QD32 for responsive multitasking
  • V-NAND 3-bit MLC with 512MB LPDDR4 cache delivers sustained performance and endurance
  • Dynamic thermal guard maintains optimal temperatures preventing throttling under heavy loads
  • 300 TBW and 1,500,000 hours MTBF ensure long-term reliability for demanding workloads

사양

BrandSAMSUNG
Series970 EVO
ModelMZ-V7E500BW
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity500GB
Memory ComponentsV-NAND 3-bit MLC
InterfacePCIe Gen3. X4, NVMe 1.3
ControllerSamsung Phoenix Controller
Cache512MB LPDDR4 DRAM
Max Sequential ReadUp to 3400 MBps
Max Sequential WriteUp to 2300 MBps
4KB Random ReadQD32: Up to 370,000 IOPS
QD1: Up to 15,000 IOPS
4KB Random WriteQD32: Up to 450,000 IOPS
QD1: Up to 50,000 IOPS
MTBF1,500,000 hours
FeaturesThe SSD that goes further
Accelerate into next-gen computing. The Samsung 970 EVO delivers breakthrough speeds, best-in-class reliability, and a broad range of capacity options up to 2TB. The latest V-NAND, new Phoenix controller, and Intelligent TurboWrite technology enhance high-end gaming and 4K & 3D graphic editing.
Next level SSD speed
Feel the NVMe difference. The 970 EVO transforms high-end gaming and streamlines graphic-intensive workflows with the new Phoenix controller and Intelligent TurboWrite technology. Get stunning sequential read/write speeds of 3,400/2,300 MB/s, up t
Power Consumption (Idle)Max. 30 mW
Power Consumption (Active)Average: 5.7W
Maximum: 10W (Burst mode)
Operating Temperature0°C ~ +70°C
Max Shock Resistance1,500G & 0.5 ms (Half sine)
Height2.30mm
Width22.10mm
Depth80.26mm
Weight7.94g
배송 무게0.08 kg
포장 크기145 × 97 × 23 mm

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이 상품에 대한 질문

How much power does the 970 EVO draw when it runs continuously at full load?

The drive averages 5.7 W during active use and can reach a 10 W burst ceiling, while idling at only 30 mW.

Which motherboard slot and protocol are required for the M.2 2280 PCIe Gen3 x4 NVMe 1.3 interface?

You need an M.2 2280 key-M slot wired for four PCIe 3.0 lanes and NVMe 1.3 support.

Will the Phoenix controller and 512 MB LPDDR4 cache work with an older PCIe 2.0 platform?

The drive is backward compatible and will operate at PCIe 2.0 speeds, though sequential throughput will be limited by the slower bus.

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