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PNY Technologies, Inc.

PNY Technologies, Inc. CS2150 M280CS2150-1TB-TB 1TB internal SSD

SKU CH-E79A-YZWF9 MPN M280CS2150-1TB-TB

M.2 2280 1 TB drive with PCI-Express 5.0 x4 NVMe 2.0 interface and 3D NAND, reaching 10,200 MB/s read and 8,300 MB/s write without a heatsink

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity1TB
  • Memory Components3D NAND
  • InterfacePCI-Express 5.0 x4
  • Up to 10,200 MB/s sequential read speeds PCI-Express 5.0 x4
  • Up to 8,300 MB/s sequential write speeds PCI-Express 5.0 x4
  • 1 TB capacity with 3D NAND for reliable storage
  • DRAM-less design uses HMB for efficient performance
  • NVMe 2.0 protocol enables faster boot and application launch

PCI-Express 5.0 x4 SSD for consumers

The PNY CS2150 is a 1TB internal solid state drive built for consumer desktops and laptops. It uses 3D NAND flash and the NVMe 2.0 protocol over a PCI-Express 5.0 x4 interface. The M.2 2280 form factor fits standard slots without a heatsink.

Sequential limits of PCI-Express 5.0 x4

The drive delivers sequential reads up to 10,200 MBps and writes up to 8,300 MBps. Manufacturer highlights cite peaks of 10,300 MB/s read and 8,600 MB/s write. Operating temperature spans 0°C to 70°C, while storage temperature ranges from -40°C to 85°C.

DRAM-less design with HMB and MTBF rating

No DRAM cache is present; the controller relies on host memory buffer technology. The drive carries a 1,500,000 hour MTBF rating. The bare M.2 2280 PCB allows direct motherboard mounting, leaving heatsink choice to the builder.

Najważniejsze cechy

  • Up to 10,200 MB/s sequential read speeds PCI-Express 5.0 x4
  • Up to 8,300 MB/s sequential write speeds PCI-Express 5.0 x4
  • 1 TB capacity with 3D NAND for reliable storage
  • DRAM-less design uses HMB for efficient performance
  • NVMe 2.0 protocol enables faster boot and application launch

Specyfikacja

BrandPNY
SeriesCS2150
ModelM280CS2150-1TB-TB
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity1TB
Memory Components3D NAND
InterfacePCI-Express 5.0 x4
ProtocolNVMe 2.0
CacheNo DRAM (HMB)
Max Sequential ReadUp to 10,200 MBps
Max Sequential WriteUp to 8,300 MBps
MTBF1,500,000 hours
HeatSinkwithout HeatSink
FeaturesFEATURES AND BENEFITS
• Sequential Read of up to 10,300 MB/s and Write of up to 8,600 MB/s
• Faster boot up, rapid application launch, and improved overall system performance
• Extreme performance is ideal for demanding applications, high-end games, and intense workloads
• Reliable storage
• Backed by a 5 year limited warranty or TBW & live US tech support*
Operating Temperature0°C ~ +70°C
Storage Temperature-40°C ~ +85°C
Waga przesyłki0.05 kg
Wymiary opakowania122 × 85 × 4 mm

Pytania dotyczące tego produktu

Which capacity of the CS2150 series should I choose for my build?

This model provides 1TB of 3D NAND storage in the M.2 2280 form factor, suited for consumer workloads such as gaming and demanding applications.

What does the 10,200 MB/s sequential read figure mean once the drive is installed in my system?

It represents the maximum sequential read throughput over the PCI-Express 5.0 x4 link; real-world speeds depend on motherboard support, workload and thermal conditions.

Which interface and protocol does this SSD use, and what does that cap in practice?

It uses a PCI-Express 5.0 x4 interface with NVMe 2.0 protocol, enabling up to 10,200 MB/s read and 8,300 MB/s write when the platform supports the same generation.

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