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Samsung 9100 PRO 4TB M.2 2280 SSD with silver heatsink, green PCB visible at edges

SAMSUNG

SAMSUNG 9100 PRO 4TB internal SSD MZ-VAP4T0CW

SKU CH-0VKW-DB58A MPN MZ-VAP4T0CW

4 TB PCIe 5.0 NVMe 2.0 M.2 2280 drive with heatsink reaches 14 800 MB/s read and 13 400 MB/s write

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity4TB
  • Memory ComponentsSamsung V NAND TLC (V8)
  • InterfacePCI-Express 5.0 x4

Style With Heatsink

Options 4TB w/ Heatsink

  • Sequential reads up to 14800 MB/s via PCIe 5.0 x4 interface
  • Sequential writes up to 13400 MB/s for large file transfers
  • Random reads up to 2200000 IOPS accelerate AI workloads
  • Random writes up to 2600000 IOPS boost gaming responsiveness
  • 2400 TBW endurance rating with integrated heatsink

Capacity and fit

The Samsung 9100 PRO delivers 4TB of storage in an M.2 2280 form factor with a factory-fitted heatsink. It is built for AI computing, gaming and heavy-duty workstations that need sustained high throughput.

Before ordering

Your motherboard or laptop must provide an M.2 slot wired for PCI-Express 5.0 x4 and NVMe 2.0 to reach the rated speeds. The drive measures 8.88 mm in height, so confirm that your board or chassis allows that clearance with the heatsink installed.

Sustained workload behaviour

The controller and 4 GB LPDDR4X cache maintain performance through the 964 GB Intelligent TurboWrite 2.0 buffer before writing direct to TLC. Active power draw is 9.0 W read and 8.2 W write, while the heatsink keeps temperatures in check during long renders or model training.

Najważniejsze cechy

  • Sequential reads up to 14800 MB/s via PCIe 5.0 x4 interface
  • Sequential writes up to 13400 MB/s for large file transfers
  • Random reads up to 2200000 IOPS accelerate AI workloads
  • Random writes up to 2600000 IOPS boost gaming responsiveness
  • 2400 TBW endurance rating with integrated heatsink

Specyfikacja

BrandSAMSUNG
Series9100 PRO
ModelMZ-VAP4T0CW
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity4TB
Memory ComponentsSamsung V NAND TLC (V8)
InterfacePCI-Express 5.0 x4
ProtocolNVMe 2.0
ControllerIn-House Controller
Cache4GB LPDDR4X
Intelligent TurboWrite 2.0: 964GB
EncryptionClass 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)
Max Sequential ReadUp to 14800 MBps
Max Sequential WriteUp to 13400 MBps
4KB Random ReadUp to 2,200,000 IOPS
4KB Random WriteUp to 2,600,000 IOPS
Terabytes Written (TBW)2400TB
HeatSinkwith HeatSink
Power Consumption (Idle)5.7mW Device Sleep (L1.2)
Power Consumption (Active)9.0W / 8.2W (Read/Write)
Height8.88mm
Width25mm
Depth80.15mm
Weight28g
Waga przesyłki0.91 kg
Wymiary opakowania142 × 99 × 23 mm

Inne wersje tego modelu

Jeszcze 5 w tej samej serii

Ta sama rodzina, inna pamięć, inne chłodzenie lub taktowanie — proszę porównać przed decyzją.

Pytania dotyczące tego produktu

Will the included heatsink fit inside a PlayStation 5 console?

The drive measures 8.88 mm tall with the heatsink attached, which is within the clearance allowed by the PS5 expansion slot.

Does the 4 TB capacity require a motherboard that supports NVMe 2.0 to reach full speed?

The drive uses PCIe 5.0 x4 and NVMe 2.0; it will run at PCIe 4.0 or 3.0 speeds if the slot is older, but full 14800 MB/s reads need a 5.0 x4 link.

How much power does the SSD draw during heavy workloads?

Active power is rated at 9.0 W for reads and 8.2 W for writes, dropping to 5.7 mW in device sleep.

Także w tym dziale

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Ten sam dział, ta sama kasa — osiem kryptowalut i 30-minutowa blokada kursu.