SAMSUNG 9100 PRO MZ-VAP1T0CW 1TB internal SSD
- Internal Solid Stat…
- Consumer
Prijímame kryptomeny — takže mince, ktoré držíte, môžete zameniť za skutočný hardvér.Plaťte v krypte, miňte ho na skutočný hardvér. Poistená doprava zadarmo po celom svete nad 399 $. Neutrálne kartóny bez potlače, odosielané z Nemecka.Poistená doprava zadarmo nad 399 $. Váš kurz je zablokovaný na 30 minút hneď po otvorení pokladne.Kurz zablokovaný na 30 minút. Každý produkt je zapečatený, jeho sériové číslo je overené a vzťahuje sa naň 24-mesačná záruka.Zapečatené, 24-mesačná záruka.
SAMSUNG
A 2 TB PCIe 5.0 M.2 2280 SSD with heatsink delivering up to 14 700 MB/s read and 13 400 MB/s write for AI, gaming and workstation workloads
Style With Heatsink
Options 2TB w/ Heatsink
The Samsung 9100 Pro MZ-VAP2T0CW is a 2TB NVMe 2.0 drive that uses PCIe 5.0 x4 and Samsung V NAND TLC (V8) memory. An in-house controller and 2GB LPDDR4X cache deliver sequential reads up to 14700 MBps and writes up to 13400 MBps. Random performance reaches 1850000 read IOPS and 2600000 write IOPS. It is aimed at AI computing, gaming and workstation tasks.
The M.2 2280 module measures 80.15mm long, 25mm wide and 8.88mm high, weighing 28g. An integrated heatsink handles thermal control without extra case airflow. AES 256 encryption supports Class 0, TCG/Opal 2.0 and MS eDrive IEEE1667. Intelligent TurboWrite 2.0 provides 482GB of SLC buffer. Compatible PCs, laptops and PlayStation 5 consoles can use it directly.
Active power draws 8.1W reading and 7.9W writing while idle sleep drops to 4.0mW in L1.2. The controller balances performance and heat so throughput stays consistent during long renders or model training. Rated endurance is 1200TB written. Power efficiency and the heatsink keep temperatures in check under continuous load.
| Brand | SAMSUNG |
|---|---|
| Series | 9100 PRO |
| Model | MZ-VAP2T0CW |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 2TB |
| Memory Components | Samsung V NAND TLC (V8) |
| Interface | PCI-Express 5.0 x4 |
| Protocol | NVMe 2.0 |
| Controller | In-House Controller |
| Cache | 2GB LPDDR4X Intelligent TurboWrite 2.0: 482GB |
| Encryption | Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667) |
| Max Sequential Read | Up to 14700 MBps |
| Max Sequential Write | Up to 13400 MBps |
| 4KB Random Read | Up to 1,850,000 IOPS |
| 4KB Random Write | Up to 2,600,000 IOPS |
| Terabytes Written (TBW) | 1200TB |
| HeatSink | with HeatSink |
| Power Consumption (Idle) | 4.0mW Device Sleep (L1.2) |
| Power Consumption (Active) | 8.1W / 7.9W (Read/Write) |
| Height | 8.88mm |
| Width | 25mm |
| Depth | 80.15mm |
| Weight | 28g |
| Prepravná hmotnosť | 0.16 kg |
| Rozmery balenia | 142 × 99 × 23 mm |
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The M.2 2280 form factor measures 80.15 mm long, 25 mm wide and 8.88 mm high including the integrated heatsink, so it fits any slot that accepts a 2280 module with that height allowance.
The manufacturer lists PlayStation 5 compatibility; the drive meets the console's PCIe 5.0 x4 NVMe requirement and includes the required heatsink.
Intelligent TurboWrite 2.0 provides up to 482 GB of SLC cache for burst writes, after which the drive writes directly to the V8 TLC NAND.
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