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Black rectangular 2.5 inch SATA SSD with silver label and Samsung branding

SAMSUNG

SAMSUNG 850 EVO 1TB 2.5" SATA internal SSD

SKU CH-9AHR-20BY2

A 1 TB 2.5 inch SATA solid state drive delivering up to 540 MB/s read and 520 MB/s write speeds with V-NAND 3bit MLC memory and 256-bit encryption

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form Factor2.5"
  • Capacity1TB
  • Memory ComponentsV-NAND 3bit MLC
  • InterfaceSATA-6GBPS
  • Up to 540 MB/s sequential read for fast boot and load times
  • Up to 520 MB/s sequential write for quick file saves
  • 98,000 IOPS random read at QD32 for responsive multitasking
  • 256-bit encryption standard protects stored data
  • 1500G shock resistance guards against drops and vibration

Built for everyday computing

The Samsung 850 EVO is a 2.5 inch internal solid state drive with a capacity of 1TB. It uses V-NAND 3bit MLC memory and a Samsung MGX controller. The drive is intended for consumer workloads such as operating system boot, application loading and general file storage.

SATA 6Gbps interface limits

The drive connects through a SATA 6Gbps interface, which caps sequential throughput at the bus maximum. Rated sequential read reaches up to 540 MBps and sequential write up to 520 MBps. Random read performance is up to 98,000 IOPS at queue depth 32 and up to 10,000 IOPS at queue depth 1. Random write reaches up to 90,000 IOPS at queue depth 32 and up to 40,000 IOPS at queue depth 1.

Capacity and endurance headroom

With 1TB of usable space the drive holds an operating system, a large application library and extensive media files with room to spare. Active power draw averages 3.1W and peaks at 3.6W. The drive includes 256-bit encryption and is rated for 1500G shock resistance and 20G vibration resistance across a 20 to 2000Hz range.

Points forts

  • Up to 540 MB/s sequential read for fast boot and load times
  • Up to 520 MB/s sequential write for quick file saves
  • 98,000 IOPS random read at QD32 for responsive multitasking
  • 256-bit encryption standard protects stored data
  • 1500G shock resistance guards against drops and vibration

Caractéristiques

BrandSAMSUNG
Series850 EVO
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form Factor2.5"
Capacity1TB
Memory ComponentsV-NAND 3bit MLC
InterfaceSATA-6GBPS
ControllerSamsung MGX Controller
Max Sequential ReadUp to 540 MBps
Max Sequential WriteUp to 520 MBps
4KB Random ReadUp to 98,000 IOPS (4KB, QD32)
Up to 10,000 IOPS (4KB, QD1)
4KB Random WriteUp to 90,000 IOPS (4KB, QD32)
Up to 40,000 IOPS (4KB, QD1)
Power Consumption (Active)3.1W / 3.6W (Average / Max)
Max Shock Resistance1500G, Duration 0.5m Sec, 3 Axis
Max Vibration Resistance20~2000Hz, 20G
Weight0.4

Questions sur cet article

Should I choose the 1TB version or a smaller capacity for my upgrade?

The 1TB model delivers up to 540 MB/s read and 520 MB/s write with 98,000 IOPS random read at QD32, giving you the highest performance tier in the 850 EVO line.

What do the 540 MB/s read and 520 MB/s write speeds mean once the drive is installed in my laptop?

Those are the maximum sequential transfer rates the MGX controller can sustain over the SATA 6Gbps link; real-world file copies and game loads will sit close to those numbers when the queue depth is high.

Does the SATA 6Gbps interface cap the drive's performance in practice?

The SATA 6Gbps bus tops out near 600 MB/s, so the rated 540/520 MB/s sequential speeds already sit at the interface limit; random 4K performance reaches 98,000 read and 90,000 write IOPS at QD32.

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