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A green M.2 2280 circuit board with black chips and a gold edge connector

SAMSUNG

SAMSUNG 850 EVO M.2 2280 1TB SATA Internal SSD MZ-N5E1T0BW

SKU CH-66D2-SR9YZ MPN MZ-N5E1T0BW

A 1TB M.2 2280 SATA drive using 3D V-NAND with sequential reads up to 540 MBps and writes up to 500 MBps for thin laptops and PCs

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity1TB
  • Memory Components3D NAND
  • InterfaceSATA III

Options 1TB

  • Up to 540 MB/s sequential read for fast boot and load times
  • Up to 500 MB/s sequential write to move large files quickly
  • 3D V-NAND stacks cells vertically for higher density and endurance
  • M.2 2280 form factor fits ultra-thin laptops and compact PCs
  • Samsung Magician and Data Migration software simplify setup and drive management

Samsung 850 EVO M.2 2280 1TB SATA SSD

This SATA III internal solid state drive uses Samsung 3D V-NAND and an MGX controller to deliver up to 540 MBps sequential read and 500 MBps sequential write. It is built for consumer laptops and desktops that need a 1TB capacity in the M.2 2280 form factor.

Installation and common issues

The drive fits any M.2 slot wired for SATA signalling and is secured with a single screw. Samsung Data Migration and Magician software are available for cloning and management. A common issue is installing the drive into a slot that only supports PCIe signalling, which prevents the drive from being detected.

Deciding specification: SATA III interface

This drive communicates over the SATA III interface, so the host must provide a SATA-wired M.2 connector. If the system M.2 slot is keyed exclusively for PCIe, the SSD will not function regardless of its 1TB capacity or 3D NAND technology.

特長

  • Up to 540 MB/s sequential read for fast boot and load times
  • Up to 500 MB/s sequential write to move large files quickly
  • 3D V-NAND stacks cells vertically for higher density and endurance
  • M.2 2280 form factor fits ultra-thin laptops and compact PCs
  • Samsung Magician and Data Migration software simplify setup and drive management

仕様

BrandSAMSUNG
Series850 EVO
ModelMZ-N5E1T0BW
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity1TB
Memory Components3D NAND
InterfaceSATA III
ControllerMGX
Max Sequential ReadUp to 540 MBps
Max Sequential WriteUp to 500 MBps
4KB Random ReadUp to 10,000 IOPS (QD1)
Up to 97,000 IOPS (QD32)
4KB Random WriteUp to 40,000 IOPS (QD1)
Up to 89,000 IOPS (QD32)
MTBF1,500,000 hours
Power Consumption (Idle)50mW
Power Consumption (Active)2.3W/2.7W (Read/Write)
Operating Temperature0°C ~ +70°C
Storage Temperature-40°C ~ +85°C
Operating Humidity5% to 95% RH
Max Shock Resistance1500G
Max Vibration Resistance20G
Height2.30mm
Width22.00mm
Depth80.00mm
Weight40.00g
配送重量0.07 kg
梱包サイズ142 × 99 × 23 mm

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