SAMSUNG 850 EVO M.2 2280 250GB SATA internal SSD MZ-N5E250BW
- Internal SSD Single…
- M.2 2280
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SAMSUNG
A 1TB M.2 2280 SATA drive using 3D V-NAND with sequential reads up to 540 MBps and writes up to 500 MBps for thin laptops and PCs
This SATA III internal solid state drive uses Samsung 3D V-NAND and an MGX controller to deliver up to 540 MBps sequential read and 500 MBps sequential write. It is built for consumer laptops and desktops that need a 1TB capacity in the M.2 2280 form factor.
The drive fits any M.2 slot wired for SATA signalling and is secured with a single screw. Samsung Data Migration and Magician software are available for cloning and management. A common issue is installing the drive into a slot that only supports PCIe signalling, which prevents the drive from being detected.
This drive communicates over the SATA III interface, so the host must provide a SATA-wired M.2 connector. If the system M.2 slot is keyed exclusively for PCIe, the SSD will not function regardless of its 1TB capacity or 3D NAND technology.
| Brand | SAMSUNG |
|---|---|
| Series | 850 EVO |
| Model | MZ-N5E1T0BW |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 1TB |
| Memory Components | 3D NAND |
| Interface | SATA III |
| Controller | MGX |
| Max Sequential Read | Up to 540 MBps |
| Max Sequential Write | Up to 500 MBps |
| 4KB Random Read | Up to 10,000 IOPS (QD1) Up to 97,000 IOPS (QD32) |
| 4KB Random Write | Up to 40,000 IOPS (QD1) Up to 89,000 IOPS (QD32) |
| MTBF | 1,500,000 hours |
| Power Consumption (Idle) | 50mW |
| Power Consumption (Active) | 2.3W/2.7W (Read/Write) |
| Operating Temperature | 0°C ~ +70°C |
| Storage Temperature | -40°C ~ +85°C |
| Operating Humidity | 5% to 95% RH |
| Max Shock Resistance | 1500G |
| Max Vibration Resistance | 20G |
| Height | 2.30mm |
| Width | 22.00mm |
| Depth | 80.00mm |
| Weight | 40.00g |
| Shipping weight | 0.07 kg |
| Package size | 142 × 99 × 23 mm |
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