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Small rectangular M.2 2280 circuit board with black label and gold edge connector

SAMSUNG

SAMSUNG 960 PRO MZ-V6P1T0BW 1TB internal SSD

SKU CH-G0DQ-W4V30 MPN MZ-V6P1T0BW

M.2 2280 1TB NVMe drive with PCIe 3.0 x4 interface delivering up to 3500 MBps read and 2100 MBps write speeds plus 440,000 IOPS random read performance

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity1TB
  • Memory Components3D NAND
  • InterfacePCI-Express 3.0 x4

Options 1TB

  • Sequential read up to 3500 MBps for rapid large-file access
  • Sequential write up to 2100 MBps accelerates content creation workloads
  • Random read 440000 IOPS at QD32 delivers responsive multitasking
  • AES 256-bit hardware encryption protects sensitive data
  • 5 million hours MTBF indicates long-term reliability

Samsung 960 PRO 1TB NVMe SSD

The Samsung 960 PRO MZ-V6P1T0BW is a 1TB internal solid state drive built for consumer workloads that demand sustained throughput. It uses a PCI-Express 3.0 x4 interface with NVMe protocol and a Samsung Polaris controller backed by 1GB of DRAM cache. The drive delivers sequential reads up to 3500 MBps and writes up to 2100 MBps, with random 4KB performance reaching 440,000 IOPS read and 360,000 IOPS write at QD32.

M.2 2280 installation and common issues

The drive follows the M.2 2280 form factor and installs directly into a compatible motherboard slot secured by a single screw. Most installation problems arise when the slot shares bandwidth with other PCIe devices or operates in SATA mode, which disables NVMe operation. Ensure the BIOS is updated to recognise NVMe boot devices and that the slot is configured for PCIe x4 rather than x2 or SATA. Thermal throttling can occur under heavy sustained loads if the motherboard lacks a heatsink or adequate airflow over the drive.

Compatibility checks before ordering

Verify that your motherboard provides an M.2 slot keyed for PCIe 3.0 x4 NVMe operation and that the slot length accepts 2280 modules. Confirm the system BIOS supports NVMe boot if you intend to use the drive as the primary OS volume. Check whether the platform provides enough PCIe lanes to run the slot at x4 without downgrading other devices such as GPUs or additional storage. The drive operates within 0°C to 70°C and draws 5.3W active power, so ensure case airflow can maintain that temperature range.

特長

  • Sequential read up to 3500 MBps for rapid large-file access
  • Sequential write up to 2100 MBps accelerates content creation workloads
  • Random read 440000 IOPS at QD32 delivers responsive multitasking
  • AES 256-bit hardware encryption protects sensitive data
  • 5 million hours MTBF indicates long-term reliability

仕様

BrandSAMSUNG
Series960 PRO
ModelMZ-V6P1T0BW
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity1TB
Memory Components3D NAND
InterfacePCI-Express 3.0 x4
ControllerSamsung Polaris controller
Cache1GB DRAM
Max Sequential ReadUp to 3500 MBps
Max Sequential WriteUp to 2100 MBps
4KB Random ReadUp to 440,000 IOPS (4KB, QD32)
Up to 14,000 IOPS (4KB, QD1)
4KB Random WriteUp to 360,000 IOPS (4KB, QD32)
Up to 50,000 IOPS (4KB, QD1)
MTBF1,500,000 hours
FeaturesTRIM Support: TRIM Supported
S.M.A.R.T Support: S.M.A.R.T Supported
GC (Garbage Collection): Auto Garbage Collection Algorithm
Encryption Support: AES 256-bit for User Data Encryption
Device Sleep Mode Support: 5mW (L1.2)
Power Consumption (Idle)40mW
Power Consumption (Active)5.3W
Operating Temperature0°C ~ +70°C
Max Shock Resistance1500G, duration 0.5 msec, 3 axis
Height2.30mm
Width22.10mm
Depth80.00mm
Weight9.00g
配送重量0.05 kg
梱包サイズ145 × 99 × 23 mm

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この商品に関する質問

Does the M.2 2280 form factor fit my motherboard slot?

The drive uses the M.2 2280 form factor, so it fits any motherboard with an M.2 slot keyed for 2280-length modules.

Will it work with a PCIe 3.0 x4 slot or do I need a newer generation?

The drive connects via PCI-Express 3.0 x4 and is fully compatible with any motherboard that provides a PCIe 3.0 x4 or faster M.2 slot.

What sequential read and write speeds can I expect in real workloads?

Up to 3500 MB/s sequential read and up to 2100 MB/s sequential write, with 440,000 IOPS random read and 360,000 IOPS random write at queue depth 32.

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