SAMSUNG 960 PRO MZ-V6P2T0BW 2TB internal SSD
- Internal Solid Stat…
- Consumer
SAMSUNG
M.2 2280 1TB NVMe drive with PCIe 3.0 x4 interface delivering up to 3500 MBps read and 2100 MBps write speeds plus 440,000 IOPS random read performance
Options 1TB
The Samsung 960 PRO MZ-V6P1T0BW is a 1TB internal solid state drive built for consumer workloads that demand sustained throughput. It uses a PCI-Express 3.0 x4 interface with NVMe protocol and a Samsung Polaris controller backed by 1GB of DRAM cache. The drive delivers sequential reads up to 3500 MBps and writes up to 2100 MBps, with random 4KB performance reaching 440,000 IOPS read and 360,000 IOPS write at QD32.
The drive follows the M.2 2280 form factor and installs directly into a compatible motherboard slot secured by a single screw. Most installation problems arise when the slot shares bandwidth with other PCIe devices or operates in SATA mode, which disables NVMe operation. Ensure the BIOS is updated to recognise NVMe boot devices and that the slot is configured for PCIe x4 rather than x2 or SATA. Thermal throttling can occur under heavy sustained loads if the motherboard lacks a heatsink or adequate airflow over the drive.
Verify that your motherboard provides an M.2 slot keyed for PCIe 3.0 x4 NVMe operation and that the slot length accepts 2280 modules. Confirm the system BIOS supports NVMe boot if you intend to use the drive as the primary OS volume. Check whether the platform provides enough PCIe lanes to run the slot at x4 without downgrading other devices such as GPUs or additional storage. The drive operates within 0°C to 70°C and draws 5.3W active power, so ensure case airflow can maintain that temperature range.
| Brand | SAMSUNG |
|---|---|
| Series | 960 PRO |
| Model | MZ-V6P1T0BW |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 1TB |
| Memory Components | 3D NAND |
| Interface | PCI-Express 3.0 x4 |
| Controller | Samsung Polaris controller |
| Cache | 1GB DRAM |
| Max Sequential Read | Up to 3500 MBps |
| Max Sequential Write | Up to 2100 MBps |
| 4KB Random Read | Up to 440,000 IOPS (4KB, QD32) Up to 14,000 IOPS (4KB, QD1) |
| 4KB Random Write | Up to 360,000 IOPS (4KB, QD32) Up to 50,000 IOPS (4KB, QD1) |
| MTBF | 1,500,000 hours |
| Features | TRIM Support: TRIM Supported S.M.A.R.T Support: S.M.A.R.T Supported GC (Garbage Collection): Auto Garbage Collection Algorithm Encryption Support: AES 256-bit for User Data Encryption Device Sleep Mode Support: 5mW (L1.2) |
| Power Consumption (Idle) | 40mW |
| Power Consumption (Active) | 5.3W |
| Operating Temperature | 0°C ~ +70°C |
| Max Shock Resistance | 1500G, duration 0.5 msec, 3 axis |
| Height | 2.30mm |
| Width | 22.10mm |
| Depth | 80.00mm |
| Weight | 9.00g |
| 배송 무게 | 0.05 kg |
| 포장 크기 | 145 × 99 × 23 mm |
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The drive uses the M.2 2280 form factor, so it fits any motherboard with an M.2 slot keyed for 2280-length modules.
The drive connects via PCI-Express 3.0 x4 and is fully compatible with any motherboard that provides a PCIe 3.0 x4 or faster M.2 slot.
Up to 3500 MB/s sequential read and up to 2100 MB/s sequential write, with 440,000 IOPS random read and 360,000 IOPS random write at queue depth 32.
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